Hydrogen related defects in InP

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	Hydrogen related defects in InP
	Han YJ ; Liu XL ; Jiao JH ; Lin LY
	1998
会议名称	symposium on light emitting devices for optoelectronic applications / 28th state-of-the-art program on compound semiconductors at 193th electrochemical-soc meeting
会议日期	may 03-08, 1998
会议地点	san diego, ca
页码	351-358
通讯作者	han yj chinese acad sci inst semicond lab semicond mat sci pob 912 beijing 100083 peoples r china.
中文摘要	local vibrational modes(lvms) in tenths of inp samples reveal clearly existence of complexes related to hydrogen. complexes of vacancy at indium site with one to four hydrogen atom(s) and isolated hydrogen or hydrogen dimers and complexes of hydrogen with various impurities and intrinsic defects are investigated by ftir. especially hydrogen related complexes between various transition metals and hydrogen or hydrogen related complexes between hydrogen with point defects. new lvms related to hydrogen will be reported in this paper. dynamical formation mechanism of defects in the annealed nominally undoped semiinsulating inp obtained by high pressure, high temperature annealing of ultra purity materials is proposed. hydrogen can acts as actuator for antistructure defects production. structural, electronic and vibrational properties of lvms related to hydrogen as well as their temperature effects are discussed.
英文摘要	local vibrational modes(lvms) in tenths of inp samples reveal clearly existence of complexes related to hydrogen. complexes of vacancy at indium site with one to four hydrogen atom(s) and isolated hydrogen or hydrogen dimers and complexes of hydrogen with various impurities and intrinsic defects are investigated by ftir. especially hydrogen related complexes between various transition metals and hydrogen or hydrogen related complexes between hydrogen with point defects. new lvms related to hydrogen will be reported in this paper. dynamical formation mechanism of defects in the annealed nominally undoped semiinsulating inp obtained by high pressure, high temperature annealing of ultra purity materials is proposed. hydrogen can acts as actuator for antistructure defects production. structural, electronic and vibrational properties of lvms related to hydrogen as well as their temperature effects are discussed.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:37:21z (gmt). no. of bitstreams: 1 3042.pdf: 265619 bytes, checksum: ecf725452415496591609cf82ca78bb3 (md5) previous issue date: 1998; electrochem soc, electr div.; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	electrochem soc, electr div.
会议录	proceedings of the symposium on light emitting devices for optoelectronic applications and the twenty-eighth state-of-the-art program on compound semiconductors, 98 (2)
会议录出版者	electrochemical society inc ; 65 s main st, pennington, nj 08534-2839 usa
会议录出版地	65 s main st, pennington, nj 08534-2839 usa
学科主题	半导体材料
语种	英语
ISBN号	1-56677-194-3
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/13879]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Han YJ,Liu XL,Jiao JH,et al. Hydrogen related defects in InP[C]. 见:symposium on light emitting devices for optoelectronic applications / 28th state-of-the-art program on compound semiconductors at 193th electrochemical-soc meeting. san diego, ca. may 03-08, 1998.