On the nature of iron in InP: A FTIR study | |
Han YJ ; Liu XL ; Lao JH ; Lin LY | |
1998 | |
会议名称 | conference on integrated optoelectronics ii |
会议日期 | sep 18-19, 1998 |
会议地点 | beijing, peoples r china |
关键词 | iron phonon sideband semi-insulating InP |
页码 | 1-4 |
通讯作者 | han yj chinese acad sci inst semicond lab semicond mat sci pob 912 beijing 100083 peoples r china. |
中文摘要 | fe is still the commonly used dopant to fabricate semi-insulating(si) inp, a key material for high-speed electronic and optoelectronic devices. high resolved absorption spectra of the internal d-d shell transitions at fe2+ in inp and the related phonon sidebands and a series of iron related absorption lines are presented. detailed infrared absorption study of the characteristic spectra of four zero-phonon lines(zpls), which are attributed to transitions within the 5d ground state of fe2+ (3d(6)) on the indium site in a tetrahedral crystal field of phosphorus atoms and their temperature effects are given. |
英文摘要 | fe is still the commonly used dopant to fabricate semi-insulating(si) inp, a key material for high-speed electronic and optoelectronic devices. high resolved absorption spectra of the internal d-d shell transitions at fe2+ in inp and the related phonon sidebands and a series of iron related absorption lines are presented. detailed infrared absorption study of the characteristic spectra of four zero-phonon lines(zpls), which are attributed to transitions within the 5d ground state of fe2+ (3d(6)) on the indium site in a tetrahedral crystal field of phosphorus atoms and their temperature effects are given.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:37:16z (gmt). no. of bitstreams: 1 3028.pdf: 171085 bytes, checksum: fe81defae9452ddf3b0c55241c8295b4 (md5) previous issue date: 1998; spie int soc opt engn.; cos chinese opt soc.; coema.; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china |
收录类别 | CPCI-S |
会议主办者 | spie int soc opt engn.; cos chinese opt soc.; coema. |
会议录 | integrated optoelectronics ii, 3551
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会议录出版者 | spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
会议录出版地 | 1000 20th st, po box 10, bellingham, wa 98227-0010 usa |
学科主题 | 光电子学 |
语种 | 英语 |
ISSN号 | 0277-786x |
ISBN号 | 0-8194-3012-9 |
内容类型 | 会议论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/13851] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Han YJ,Liu XL,Lao JH,et al. On the nature of iron in InP: A FTIR study[C]. 见:conference on integrated optoelectronics ii. beijing, peoples r china. sep 18-19, 1998. |
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