On the nature of iron in InP: A FTIR study

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	On the nature of iron in InP: A FTIR study
	Han YJ ; Liu XL ; Lao JH ; Lin LY
	1998
会议名称	conference on integrated optoelectronics ii
会议日期	sep 18-19, 1998
会议地点	beijing, peoples r china
关键词	iron phonon sideband semi-insulating InP
页码	1-4
通讯作者	han yj chinese acad sci inst semicond lab semicond mat sci pob 912 beijing 100083 peoples r china.
中文摘要	fe is still the commonly used dopant to fabricate semi-insulating(si) inp, a key material for high-speed electronic and optoelectronic devices. high resolved absorption spectra of the internal d-d shell transitions at fe2+ in inp and the related phonon sidebands and a series of iron related absorption lines are presented. detailed infrared absorption study of the characteristic spectra of four zero-phonon lines(zpls), which are attributed to transitions within the 5d ground state of fe2+ (3d(6)) on the indium site in a tetrahedral crystal field of phosphorus atoms and their temperature effects are given.
英文摘要	fe is still the commonly used dopant to fabricate semi-insulating(si) inp, a key material for high-speed electronic and optoelectronic devices. high resolved absorption spectra of the internal d-d shell transitions at fe2+ in inp and the related phonon sidebands and a series of iron related absorption lines are presented. detailed infrared absorption study of the characteristic spectra of four zero-phonon lines(zpls), which are attributed to transitions within the 5d ground state of fe2+ (3d(6)) on the indium site in a tetrahedral crystal field of phosphorus atoms and their temperature effects are given.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:37:16z (gmt). no. of bitstreams: 1 3028.pdf: 171085 bytes, checksum: fe81defae9452ddf3b0c55241c8295b4 (md5) previous issue date: 1998; spie int soc opt engn.; cos chinese opt soc.; coema.; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	spie int soc opt engn.; cos chinese opt soc.; coema.
会议录	integrated optoelectronics ii, 3551
会议录出版者	spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa
会议录出版地	1000 20th st, po box 10, bellingham, wa 98227-0010 usa
学科主题	光电子学
语种	英语
ISSN号	0277-786x
ISBN号	0-8194-3012-9
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/13851]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Han YJ,Liu XL,Lao JH,et al. On the nature of iron in InP: A FTIR study[C]. 见:conference on integrated optoelectronics ii. beijing, peoples r china. sep 18-19, 1998.