Design and fabrication of polarization-insensitive 1550 mm semiconductor optical amplifiers

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Design and fabrication of polarization-insensitive 1550 mm semiconductor optical amplifiers
	Yu LJ
	2001
会议名称	asia-pacific optical and wireless communications conference (apoc 2001)
会议日期	nov 12-15, 2001
会议地点	beijing, peoples r china
关键词	semiconductor optical amplifier strained quantum well optical waveguide polarization QUANTUM-WELL LASERS
页码	539-545
通讯作者	yu lj chinese acad sci inst semicond state key lab integrated optoelect pob 912 beijing 100083 peoples r china.
中文摘要	polarization-insensitive semiconductor optical amplifiers (soa's) with tensile-strained multi-quantum-wells as actice regions are designed and fabricated. the 6x6 luttinger-kohn model and bir-pikus hamiltonian are employed to calculate the valence subband structures of strained quantum wells, and then a lorentzian line-shape function is combined to calculate the material gain spectra for te and tm modes. the device structure for polarization insensitive soa is designed based on the materialde gain spectra of te and tm modes and the gain factors for multilayer slab waveguide. based on the designed structure parameters, we grow the soa wafer by mocvd and get nearly magnitude of output power for te and tm modes from the broad-area semiconductor lasers fabricated from the wafer.
英文摘要	polarization-insensitive semiconductor optical amplifiers (soa's) with tensile-strained multi-quantum-wells as actice regions are designed and fabricated. the 6x6 luttinger-kohn model and bir-pikus hamiltonian are employed to calculate the valence subband structures of strained quantum wells, and then a lorentzian line-shape function is combined to calculate the material gain spectra for te and tm modes. the device structure for polarization insensitive soa is designed based on the materialde gain spectra of te and tm modes and the gain factors for multilayer slab waveguide. based on the designed structure parameters, we grow the soa wafer by mocvd and get nearly magnitude of output power for te and tm modes from the broad-area semiconductor lasers fabricated from the wafer.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:38z (gmt). no. of bitstreams: 1 2846.pdf: 79286 bytes, checksum: 0f18a12e7144c8b4992b5a36fd2aec85 (md5) previous issue date: 2001; spie.; china opt & optoelectr manufacturers assoc.; minist informat ind.; china inst commun.; nel ntt electr corp.; credit suisse first boston technol grp.; china telecom.; huawei technologies.; zte corp.; sany optilayer co ltd.; dateng telecom.; photon technol.; o net commun ltd.; china minist sci & technol.; alcatel.; corning.; australia opt soc.; beijing univ posts & telecommun.; korea assoc photon ind dev.; optoelectr ind dev assoc.; optoelectr ind & technol dev assoc.; opt soc india.; opt soc japan.; opt soc korea.; photon ind dev assoc.; photon assoc.; spie asia pacific chapters.; spie tech grp opt networks.; tsinghua univ.; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
收录类别	CPCI-S
会议主办者	spie.; china opt & optoelectr manufacturers assoc.; minist informat ind.; china inst commun.; nel ntt electr corp.; credit suisse first boston technol grp.; china telecom.; huawei technologies.; zte corp.; sany optilayer co ltd.; dateng telecom.; photon technol.; o net commun ltd.; china minist sci & technol.; alcatel.; corning.; australia opt soc.; beijing univ posts & telecommun.; korea assoc photon ind dev.; optoelectr ind dev assoc.; optoelectr ind & technol dev assoc.; opt soc india.; opt soc japan.; opt soc korea.; photon ind dev assoc.; photon assoc.; spie asia pacific chapters.; spie tech grp opt networks.; tsinghua univ.
会议录	apoc 2001: asia-pacific optical and wireless communications: optoelectronics, materials, and devices for communications, 4580
会议录出版者	spie-int soc optical engineering ; 1000 20th st, po box 10, bellingham, wa 98227-0010 usa
会议录出版地	1000 20th st, po box 10, bellingham, wa 98227-0010 usa
学科主题	光电子学
语种	英语
ISSN号	0277-786x
ISBN号	0-8194-4310-7
内容类型	会议论文
源URL	[http://ir.semi.ac.cn/handle/172111/13669]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yu LJ. Design and fabrication of polarization-insensitive 1550 mm semiconductor optical amplifiers[C]. 见:asia-pacific optical and wireless communications conference (apoc 2001). beijing, peoples r china. nov 12-15, 2001.