The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells | |
Jiang DS | |
2002 | |
会议名称 | international workshop on nitride semiconductors (iwn 2002) |
会议日期 | jul 22-25, 2002 |
会议地点 | aachen, germany |
关键词 | LUMINESCENCE LOCALIZATION |
页码 | 382-385 |
通讯作者 | jiang ds chinese acad sci inst semicond natl lab superlattices & microstruct pob 912 beijing 100083 peoples r china. |
中文摘要 | photoluminescence (pl) spectra of gainnas/gaas multiple quantum wells and gainnas epilayers grown on gaas substrate show an apparent "s-shape" temperature-dependence of the of dominant luminescence peak. at low temperature and weak excitation conditions, a pl peak related to nitrogen cluster-induced bound states can be well resolved in the pl spectra. it displays a remarkable red shift of up to 60 mev and is thermally quenched below 100 k with increasing temperature, being attributed to n-cluster induced bound states. the indium incorporation exhibits significant effect on the cluster formation. the rapid thermal annealing treatment at 750 c can essentially remove the bound states-induced peak. |
英文摘要 | photoluminescence (pl) spectra of gainnas/gaas multiple quantum wells and gainnas epilayers grown on gaas substrate show an apparent "s-shape" temperature-dependence of the of dominant luminescence peak. at low temperature and weak excitation conditions, a pl peak related to nitrogen cluster-induced bound states can be well resolved in the pl spectra. it displays a remarkable red shift of up to 60 mev and is thermally quenched below 100 k with increasing temperature, being attributed to n-cluster induced bound states. the indium incorporation exhibits significant effect on the cluster formation. the rapid thermal annealing treatment at 750 c can essentially remove the bound states-induced peak.; 于2010-10-29批量导入; made available in dspace on 2010-10-29t06:36:18z (gmt). no. of bitstreams: 1 2772.pdf: 246171 bytes, checksum: 19e7eae86361ab6a3caf028d5e2590b2 (md5) previous issue date: 2002; res ctr julich.; aixtron.; deutsch forsch gemeinsch.; european off aerosp res & dev.; deutsch gesell kristallwachstum & kristallzucht.; chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china |
收录类别 | CPCI-S |
会议主办者 | res ctr julich.; aixtron.; deutsch forsch gemeinsch.; european off aerosp res & dev.; deutsch gesell kristallwachstum & kristallzucht. |
会议录 | international workshop on nitride semiconductors, proceedings |
会议录出版者 | wiley-v c h verlag gmbh ; pappelallee 3, w-69469 weinheim, germany |
会议录出版地 | pappelallee 3, w-69469 weinheim, germany |
学科主题 | 半导体物理 |
语种 | 英语 |
ISBN号 | 3-527-40434-1 |
内容类型 | 会议论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/13577] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Jiang DS. The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells[C]. 见:international workshop on nitride semiconductors (iwn 2002). aachen, germany. jul 22-25, 2002. |
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