Polymer/porous GaN bulk heterojunction and its optoelectronic property

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	Polymer/porous GaN bulk heterojunction and its optoelectronic property
	Pan GB(潘革波); Wang FX(王凤霞)
刊名	APPLIED SURFACE SCIENCE
	2014-09-30
卷号	314 期号:0 页码:464-467
关键词	Porous gallium nitride Poly(3-hexylthiophene Heterojunction Electrical properties
通讯作者	潘革波
英文摘要	A bulk heterojunction of poly(3-hexylthiophene) (P3HT) and porous gallium nitride (PGaN) was formed by a facile solution process. Raman spectra indicated that no chemical modification occurred between P3HT and PGaN. Compared with pristine GaN film, PGaN exhibited a substantial enhancement of photoluminescence (PL) intensity. PL spectra also revealed that the excitonic emission and recombination were partially quenched at the P3HT/PGaN interface. Furthermore, prototype devices were fabricated on the basis of P3HT/PGaN heterojunction and exhibited obvious rectifying and photoresponse properties in dark and under ultraviolet light illumination. (C) 2014 Elsevier B.V. All rights reserved.
收录类别	SCI
语种	英语
WOS记录号	WOS:000341464100063
公开日期	2014-12-01
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/1627]
专题	苏州纳米技术与纳米仿生研究所_学科交叉综合研究部_潘革波团队
推荐引用方式 GB/T 7714	Pan GB,Wang FX. Polymer/porous GaN bulk heterojunction and its optoelectronic property[J]. APPLIED SURFACE SCIENCE,2014,314(0):464-467.
APA	Pan GB,&Wang FX.(2014).Polymer/porous GaN bulk heterojunction and its optoelectronic property.APPLIED SURFACE SCIENCE,314(0),464-467.
MLA	Pan GB,et al."Polymer/porous GaN bulk heterojunction and its optoelectronic property".APPLIED SURFACE SCIENCE 314.0(2014):464-467.