Amorphous thermal stability of Al-doped Sb2Te3 films for phase-change memory application

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米生物医学与安全研究部 > 程国胜团队

	Amorphous thermal stability of Al-doped Sb2Te3 films for phase-change memory application
	*Cheng, GS(程国胜); Kong, T(孔涛); Shi, L(石林)**
刊名	APPLIED PHYSICS LETTERS
	2013-10
卷号	103 期号:18
通讯作者	Cheng, GS*(程国胜)
英文摘要	Amorphous thermal stability of Al-doped Sb2Te3 films was investigated by high-temperature X-ray diffraction from room temperature to 350 degrees C, showing the structural evolution step by step from amorphous to crystalline phases. The films' crystallization temperatures were elevated from 124 degrees C to 244 degrees C with increasing Al concentrations, resulting in significant improvement of their thermal stability. Formations of Al-Sb and Al-Te bonds in doped films were revealed and further re-validated by ab initio calculation, indicating that Al atoms bonded to Sb and Te atoms to suppress the phase transformation from amorphous to crystalline states. (c) 2013 AIP Publishing LLC.
收录类别	SCI
语种	英语
WOS记录号	WOS:000327816000064
公开日期	2014-01-03
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/1192]
专题	苏州纳米技术与纳米仿生研究所_纳米生物医学与安全研究部_程国胜团队
通讯作者	Cheng, GS*(程国胜)
推荐引用方式 GB/T 7714	Cheng, GS*,Kong, T,Shi, L. Amorphous thermal stability of Al-doped Sb2Te3 films for phase-change memory application[J]. APPLIED PHYSICS LETTERS,2013,103(18).
APA	Cheng, GS*,Kong, T,&Shi, L.(2013).Amorphous thermal stability of Al-doped Sb2Te3 films for phase-change memory application.APPLIED PHYSICS LETTERS,103(18).
MLA	Cheng, GS*,et al."Amorphous thermal stability of Al-doped Sb2Te3 films for phase-change memory application".APPLIED PHYSICS LETTERS 103.18(2013).