Room-temperature terahertz detection based on CVD graphene transistor

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	Room-temperature terahertz detection based on CVD graphene transistor
	Yang, XX(杨昕昕); Sun, JD(孙建东); Qin, H(秦华); Lv, L(吕利); Su, LN(苏丽娜); Yan, B(闫博); Li, XX(李欣幸); Zhang, ZP(张志鹏); Fang, JY(方靖岳)
刊名	CHINESE PHYSICS B
	2015
卷号	24 期号:4 页码:5
关键词	graphene field effect transistor self-mixing terahertz detection
通讯作者	Qin, H (秦华)
英文摘要	We report the fabrication and characterization of a single-layer graphene field-effect terahertz detector, which is coupled with dipole-like antennas based on the self-mixing detector model. The graphene is grown by chemical vapor deposition and then transferred onto an SiO2/Si substrate. We demonstrate room-temperature detection at 237 GHz. The detector could offer a voltage responsivity of 0.1 V/W and a noise equivalent power of 207 nW/Hz(1/2). Our modeling indicates that the observed photovoltage in the p-type gated channel can be well fit by the self-mixing theory. A different photoresponse other than self-mixing may apply for the n-type gated channel.
收录类别	SCI
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/3394]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_秦华团队
推荐引用方式 GB/T 7714	Yang, XX,Sun, JD,Qin, H,et al. Room-temperature terahertz detection based on CVD graphene transistor[J]. CHINESE PHYSICS B,2015,24(4):5.
APA	Yang, XX.,Sun, JD.,Qin, H.,Lv, L.,Su, LN.,...&Fang, JY.(2015).Room-temperature terahertz detection based on CVD graphene transistor.CHINESE PHYSICS B,24(4),5.
MLA	Yang, XX,et al."Room-temperature terahertz detection based on CVD graphene transistor".CHINESE PHYSICS B 24.4(2015):5.