Modeling a radio-frequency single-electron-transistor scanning probe

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	Modeling a radio-frequency single-electron-transistor scanning probe
	Qin H(秦华); Li XX(李欣幸); Sun JD(孙建东)
刊名	JAPANESE JOURNAL OF APPLIED PHYSICS
	2014-08
卷号	53 期号:8
关键词	QUANTUM-DOT NOISE LIMIT MICROSCOPY
通讯作者	Lu, L
英文摘要	Single-electron transistors (SETs) are ultra-sensitive charge sensors. Aiming to develop a radio-frequency single-electron-transistor (RF-SET) scanning probe system, we build a complete device/circuit model to evaluate the charge sensitivity and the spatial resolution. Simulations of a gedunken experiment in which a silicon RF-SET probe scans a nanowire device suggest a charge sensitivity in the order of 10(-5)-10(-3) e/Hz(1/2) and a spatial resolution better than 100 nm. The dynamic range and the linearity of the scanning probe are also discussed. The model would provide a quantitative interpretation for future real imaging experiment and an operation guidance for a realistic RF-SET scanning probe system. (C) 2014 The Japan Society of Applied Physics
收录类别	SCI
语种	英语
WOS记录号	WOS:000341479100016
公开日期	2014-12-02
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/1633]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_秦华团队
推荐引用方式 GB/T 7714	Qin H,Li XX,Sun JD. Modeling a radio-frequency single-electron-transistor scanning probe[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2014,53(8).
APA	Qin H,Li XX,&Sun JD.(2014).Modeling a radio-frequency single-electron-transistor scanning probe.JAPANESE JOURNAL OF APPLIED PHYSICS,53(8).
MLA	Qin H,et al."Modeling a radio-frequency single-electron-transistor scanning probe".JAPANESE JOURNAL OF APPLIED PHYSICS 53.8(2014).