Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米器件及相关材料研究部 > 刘建平团队

	Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness
	Yang, J; Zhao, DG; Jiang, DS; Chen, P; Zhu, JJ; Liu, ZS; Le, LC; Li, XJ; He, XG; Liu, JP(刘建平)
刊名	JOURNAL OF APPLIED PHYSICS
	2015
卷号	117 期号:5 页码:6
通讯作者	Zhao, DG
英文摘要	The optical and structural properties of InGaN/GaN multi-quantum wells (MQWs) with different thicknesses of low temperature grown GaN cap layers are investigated. It is found that the MQW emission energy red-shifts and the peak intensity decreases with increasing GaN cap layer thickness, which may be partly caused by increased floating indium atoms accumulated at quantum well (QW) surface. They will result in the increased interface roughness, higher defect density, and even lead to a thermal degradation of QW layers. An extra growth interruption introduced before the growth of GaN cap layer can help with evaporating the floating indium atoms, and therefore is an effective method to improve the optical properties of high indium content InGaN/GaN MQWs. (C) 2015 AIP Publishing LLC.
收录类别	SCI
语种	英语
公开日期	2016-05-03
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/3433]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式 GB/T 7714	Yang, J,Zhao, DG,Jiang, DS,et al. Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness[J]. JOURNAL OF APPLIED PHYSICS,2015,117(5):6.
APA	Yang, J.,Zhao, DG.,Jiang, DS.,Chen, P.,Zhu, JJ.,...&Du, GT.(2015).Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness.JOURNAL OF APPLIED PHYSICS,117(5),6.
MLA	Yang, J,et al."Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness".JOURNAL OF APPLIED PHYSICS 117.5(2015):6.