Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米器件及相关材料研究部 > 刘建平团队

	Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells
	Liu, W; Zhao, DG; Jiang, DS; Chen, P; Liu, ZS; Zhu, JJ; Shi, M; Zhao, DM; Li, X; Liu, JP(刘建平)
刊名	OPTICS EXPRESS
	2015
卷号	23 期号:12 页码:9
通讯作者	Zhao, DG
英文摘要	Three green light emitting InGaN/GaN multiple quantum well (MQW) structures with different In composition grown by metal-organic chemical vapor deposition are investigated by the X-ray diffraction and the temperature-dependent photoluminescence (PL) measurements. It is found that when the In composition increases in the InGaN/GaN MQWs, the PL spectral bandwidth may anomalously decrease with increasing temperature. The reduction of PL spectral bandwidth may be ascribed to the enhanced non-radiative recombination process which may lower the light emission efficiency of the localized luminescent centers with shallow localization energy in the high-In-content InGaN quantum wells and also cause a reduction of integrated PL intensity. (C) 2015 Optical Society of America
收录类别	SCI
语种	英语
公开日期	2016-05-03
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/3353]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式 GB/T 7714	Liu, W,Zhao, DG,Jiang, DS,et al. Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells[J]. OPTICS EXPRESS,2015,23(12):9.
APA	Liu, W.,Zhao, DG.,Jiang, DS.,Chen, P.,Liu, ZS.,...&Du, GT.(2015).Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells.OPTICS EXPRESS,23(12),9.
MLA	Liu, W,et al."Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells".OPTICS EXPRESS 23.12(2015):9.