Spatially resolved investigation of strain and composition variations in (In,Ga)N/GaN epilayers

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米器件及相关材料研究部 > 刘建平团队

	Spatially resolved investigation of strain and composition variations in (In,Ga)N/GaN epilayers
	Yang, H(杨辉)
刊名	APPLIED PHYSICS LETTERS
	2013-02
卷号	102 期号:5
关键词	BAND-GAP OPTICAL-PROPERTIES INGAN LAYER CASINO
通讯作者	Wilsch, B
英文摘要	The strain state and composition of a 400nm thick (In,Ga)N layer grown by metal-organic chemical vapor deposition on a GaN template are investigated by spatially integrated x-ray diffraction and cathodoluminescence (CL) spectroscopy as well as by spatially resolved CL and energy dispersive x-ray analysis. The CL investigations confirm a process of strain relaxation accompanied by an increasing indium content toward the surface of the (In,Ga)N layer, which is known as the compositional pulling effect. Moreover, we identify the strained bottom, unstrained top, and gradually relaxed intermediate region of the (In,Ga)N layer. In addition to an increase of the indium content along the growth direction, the strain relaxation leads to an enhancement of the lateral variations of the indium distribution toward the surface
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000314770300050
公开日期	2014-01-15
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/1401]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式 GB/T 7714	Yang, H. Spatially resolved investigation of strain and composition variations in (In,Ga)N/GaN epilayers[J]. APPLIED PHYSICS LETTERS,2013,102(5).
APA	Yang, H.(2013).Spatially resolved investigation of strain and composition variations in (In,Ga)N/GaN epilayers.APPLIED PHYSICS LETTERS,102(5).
MLA	Yang, H."Spatially resolved investigation of strain and composition variations in (In,Ga)N/GaN epilayers".APPLIED PHYSICS LETTERS 102.5(2013).