Spatially resolved investigation of strain and composition variations in (In,Ga)N/GaN epilayers | |
Yang, H(杨辉)![]() | |
刊名 | APPLIED PHYSICS LETTERS
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2013-02 | |
卷号 | 102期号:5 |
关键词 | BAND-GAP OPTICAL-PROPERTIES INGAN LAYER CASINO |
通讯作者 | Wilsch, B |
英文摘要 | The strain state and composition of a 400nm thick (In,Ga)N layer grown by metal-organic chemical vapor deposition on a GaN template are investigated by spatially integrated x-ray diffraction and cathodoluminescence (CL) spectroscopy as well as by spatially resolved CL and energy dispersive x-ray analysis. The CL investigations confirm a process of strain relaxation accompanied by an increasing indium content toward the surface of the (In,Ga)N layer, which is known as the compositional pulling effect. Moreover, we identify the strained bottom, unstrained top, and gradually relaxed intermediate region of the (In,Ga)N layer. In addition to an increase of the indium content along the growth direction, the strain relaxation leads to an enhancement of the lateral variations of the indium distribution toward the surface |
收录类别 | SCI ; EI |
语种 | 英语 |
WOS记录号 | WOS:000314770300050 |
公开日期 | 2014-01-15 |
内容类型 | 期刊论文 |
源URL | [http://ir.sinano.ac.cn/handle/332007/1401] ![]() |
专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队 |
推荐引用方式 GB/T 7714 | Yang, H. Spatially resolved investigation of strain and composition variations in (In,Ga)N/GaN epilayers[J]. APPLIED PHYSICS LETTERS,2013,102(5). |
APA | Yang, H.(2013).Spatially resolved investigation of strain and composition variations in (In,Ga)N/GaN epilayers.APPLIED PHYSICS LETTERS,102(5). |
MLA | Yang, H."Spatially resolved investigation of strain and composition variations in (In,Ga)N/GaN epilayers".APPLIED PHYSICS LETTERS 102.5(2013). |
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