Thermal characterization of GaN-based laser diodes by forward-voltage method

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米器件及相关材料研究部 > 刘建平团队

	Thermal characterization of GaN-based laser diodes by forward-voltage method
	H. B. Wang（王怀兵）; J. P. Liu（刘建平）; S. M. Zhang（张书明）; H. Yang(杨辉)
刊名	Journal of Applied Physics
	2012-05-01
卷号	111 期号:9 页码:094513
通讯作者	M. X. Feng（冯美鑫）
英文摘要	An expression of the relation between junction temperature and forward voltage common for both GaN-based laser diodes (LDs) and light emitting diodes is derived. By the expression, the junction temperature of GaN-based LDs emitting at 405 nm was measured at different injection current and compared with the result of micro-Raman spectroscopy, showing that the expression is reasonable. In addition, the activation energy of Mg in AlGaN/GaN superlattice layers is obtained based on the temperature dependence of forward voltage.
收录类别	SCI
语种	英语
WOS记录号	WOS:000304109900147
公开日期	2013-01-16
内容类型	期刊论文
源URL	[http://58.210.77.100/handle/332007/915]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式 GB/T 7714	H. B. Wang,J. P. Liu,S. M. Zhang,et al. Thermal characterization of GaN-based laser diodes by forward-voltage method[J]. Journal of Applied Physics,2012,111(9):094513.
APA	H. B. Wang,J. P. Liu,S. M. Zhang,&H. Yang.(2012).Thermal characterization of GaN-based laser diodes by forward-voltage method.Journal of Applied Physics,111(9),094513.
MLA	H. B. Wang,et al."Thermal characterization of GaN-based laser diodes by forward-voltage method".Journal of Applied Physics 111.9(2012):094513.