InGaN/GaN p-i-n Photodiodes Fabricated with Mg-Doped p-InGaN Layer
Yang H(杨辉); Zhang SM
刊名CHINESE PHYSICS LETTERS
2009-10
卷号26期号:10
通讯作者Wang H
合作状况其它
英文摘要Mg-doped p-InGaN layers with In composition of about 10% are grown by metalorganic chemical vapor deposition (MOCVD). The effect of the annealing temperature on the p-type behavior of Mg-doped InGaN is studied. It is found that the hole concentration in p-InGaN increases with a rising annealing temperature in the range of 600 850 C, while the hole mobility remains nearly unchanged until the annealing temperature increases up to 750 C, after which it decreases. On the basis of conductive p-type InGaN growth, the p-In(0.1)Ga(0.9)N/i-In(0.1)Ga(0.9)N/n-GaN junction structure is grown and fabricated into photodiodes. The spectral responsivity of the InGaN/GaN p-i-n photodiodes shows that the peak responsivity at zero bias is in the wavelength range 350-400 nm.
收录类别SCI
语种英语
WOS记录号WOS:000270303200044
公开日期2010-01-15
内容类型期刊论文
源URL[http://58.210.77.100/handle/332007/133]  
专题苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_刘建平团队
推荐引用方式
GB/T 7714
Yang H,Zhang SM. InGaN/GaN p-i-n Photodiodes Fabricated with Mg-Doped p-InGaN Layer[J]. CHINESE PHYSICS LETTERS,2009,26(10).
APA Yang H,&Zhang SM.(2009).InGaN/GaN p-i-n Photodiodes Fabricated with Mg-Doped p-InGaN Layer.CHINESE PHYSICS LETTERS,26(10).
MLA Yang H,et al."InGaN/GaN p-i-n Photodiodes Fabricated with Mg-Doped p-InGaN Layer".CHINESE PHYSICS LETTERS 26.10(2009).
个性服务
查看访问统计
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。


©版权所有 ©2017 CSpace - Powered by CSpace