Surface Passivation and Interface Properties of Bulk GaAs and Epitaxial-GaAs/Ge Using Atomic Layer Deposited TiAlO Alloy Dielectric

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米器件及相关材料研究部 > 董建荣团队

	Surface Passivation and Interface Properties of Bulk GaAs and Epitaxial-GaAs/Ge Using Atomic Layer Deposited TiAlO Alloy Dielectric
	Dong, JR(董建荣)
刊名	ACS APPLIED MATERIALS & INTERFACES
	2013-02
卷号	5 期号:3 页码:949-957
关键词	IIII-V surface passivation atomic layer deposition hysteresis voltage TiAlO alloy dielectric epi-GaAs/Ge effective dielectric constant elemental out-diffusion GaAs MOS
通讯作者	Dalapati, GK
英文摘要	High quality surface passivation on bulk-GaAs substrates and epitaxial-GaAs/Ge (epi-GaAs) layers were achieved by using atomic layer deposited (ALD) titanium aluminum oxide (TiAlO) alloy dielectric. The TiAlO alloy dielectric suppresses the formation of defective native oxide on GaAs layers. X-ray photoelectron spectroscopy (XPS) analysis shows interfacial arsenic oxide (AsxOy) and elemental arsenic (As) were completely removed from the GaAs surface. Energy dispersive X-ray diffraction (EDX) analysis and secondary ion mass spectroscopy (SIMS) analysis showed that TiAlO dielectric is an effective barrier layer for reducing the out-diffusion of elemental atoms, enhancing the electrical properties of bulk-GaAs based metal-oxide-semiconductor (MOS) devices. Moreover, ALD TiAlO alloy dielectric on epi-GaAs with AlGaAs buffer layer realized smooth interface between epi-GaAs layers and TiAlO dielectric, yielding a high quality surface passivation on epi-GaAs layers, much sought-after for high-speed transistor applications on a silicon platform. Presence of a thin AlGaAs buffer layer between epi-GaAs and Ge substrates improved interface quality and gate dielectric quality through the reduction of interfacial layer formation (GaxOy)and suppression of elemental out-diffusion (Ga and As). The AlGaAs buffer layer and TiAlO dielectric play a key role to suppress the roughening, interfacial layer formation, and impurity diffusion into the dielectric, which in turn largely enhances the electrical property of the epi-GaAs MOS devices.
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000315079700064
公开日期	2014-01-15
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/1386]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_董建荣团队
推荐引用方式 GB/T 7714	Dong, JR. Surface Passivation and Interface Properties of Bulk GaAs and Epitaxial-GaAs/Ge Using Atomic Layer Deposited TiAlO Alloy Dielectric[J]. ACS APPLIED MATERIALS & INTERFACES,2013,5(3):949-957.
APA	Dong, JR.(2013).Surface Passivation and Interface Properties of Bulk GaAs and Epitaxial-GaAs/Ge Using Atomic Layer Deposited TiAlO Alloy Dielectric.ACS APPLIED MATERIALS & INTERFACES,5(3),949-957.
MLA	Dong, JR."Surface Passivation and Interface Properties of Bulk GaAs and Epitaxial-GaAs/Ge Using Atomic Layer Deposited TiAlO Alloy Dielectric".ACS APPLIED MATERIALS & INTERFACES 5.3(2013):949-957.