Colloidal Indium-Doped Zinc Oxide Nanocrystals with Tunable Work Function: Rational Synthesis and Optoelectronic Applications

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米器件及相关材料研究部 > 陈沁团队

	Colloidal Indium-Doped Zinc Oxide Nanocrystals with Tunable Work Function: Rational Synthesis and Optoelectronic Applications
	Chen, Q (陈沁)
刊名	CHEMISTRY OF MATERIALS
	2014-09-09
卷号	26 期号:17 页码:5169-5178
关键词	ZNO THIN-FILMS METAL-OXIDES ORGANIC ELECTRONICS ELECTRICAL-PROPERTIES INFRARED-ABSORPTION TEMPERATURE
英文摘要	Transition metal oxides are widely used in solution-processed optoelectronic devices as charge-transporting interlayers to improve contact properties and device performances. Here we show that the work function of oxide nanocrystal thin films, one of the most important parameters for charge-transporting interlayers, is readily tuned by rational design of material synthesis. Mechanism studies reveal that the combination of employing the reverse-injection approach and using zinc stearate and indium 2-ethylhexanoate as the cationic precursors ensures both controlled reaction pathways and balanced relative dopant-host precursor reactivity and hence high-quality indium doped zinc oxide nanocrystals. We find that the empirical rule of relative Lewis acidity fails to predict the relative reactivity of the cationic precursors and quantitative measurements are obligatory. The successful incorporation of indium dopants into host oxide nanocrystals accompanied by the generation of high density of free electrons leads to oxide thin films with lower work function. Polymer light-emitting diodes with electron-transporting interlayers based on the indium doped zinc oxide nanocrystals exhibit improved electron-injection properties and enhanced device characteristics, i.e., lower turn-on voltage, higher maximum luminance, and higher efficiency. Our study is an excellent example that new understanding on the chemical kinetics of doped nanocrystals leads to rational design of synthetic protocols and materials with tailored electronic properties, providing benefits for their optoelectronic applications.
收录类别	SCI
语种	英语
WOS记录号	WOS:000341543200035
公开日期	2014-11-27
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/1567]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_陈沁团队
推荐引用方式 GB/T 7714	Chen, Q . Colloidal Indium-Doped Zinc Oxide Nanocrystals with Tunable Work Function: Rational Synthesis and Optoelectronic Applications[J]. CHEMISTRY OF MATERIALS,2014,26(17):5169-5178.
APA	Chen, Q .(2014).Colloidal Indium-Doped Zinc Oxide Nanocrystals with Tunable Work Function: Rational Synthesis and Optoelectronic Applications.CHEMISTRY OF MATERIALS,26(17),5169-5178.
MLA	Chen, Q ."Colloidal Indium-Doped Zinc Oxide Nanocrystals with Tunable Work Function: Rational Synthesis and Optoelectronic Applications".CHEMISTRY OF MATERIALS 26.17(2014):5169-5178.