Oxygen Vacancy-Induced Room Temperature Ferromagnetism and Magnetoresistance in Fe-Doped In2O3 Films

	Oxygen Vacancy-Induced Room Temperature Ferromagnetism and Magnetoresistance in Fe-Doped In2O3 Films
	An, YK; Ren, Y; Yang, DY; Wu, ZH; Liu, JW; Wu ZH(吴忠华)
刊名	JOURNAL OF PHYSICAL CHEMISTRY C
	2015
卷号	119 期号:8 页码:4414-4421
英文摘要	The (In1-xFex)(2)O-3 films (0 <= x <= 0.09) were prepared by RF-magnetron sputtering. Structural, magnetic and transport properties of the films were investigated systematically both experimentally and theoretically. X-ray absorption spectroscopy (XAS) and multiple-scattering ab initio theoretical calculations reveal that Fe dopant atoms are substitutionally incorporated into In2O3 lattice with a mixed-valence (Fe2+/Fe3+) and form Fe-In1+2 V-O complex. All the films display room temperature ferromagnetism and the saturated magnetization (M-s) increases monotonically with the increase of Fe concentration. The Mott variable range hopping (VRH) transport behavior dominates the conduction mechanism of the films at low temperature, confirming that the carriers are localized. The Fe doping has profound effects on the positive and negative MR contributions. The positive MR contribution becomes more pronounced with Fe doping, reflecting the occurrence of spin polarization and stronger s-d exchange interaction. The bound magnetic polarons (BMPs) associated with oxygen vacancy can be considered to play an important role in achieving the ferromagnetic order of the (In1-xFex)(2)O-3 films. The variation of Ms with Fe doping has a strong correlation with the localization radius xi of carriers and the characteristic hopping temperature T-0, indicating that the change of localization effect can remarkably influence the ferromagnetic order of the (In1-xFex)(2)O-3 films.
学科主题	Chemistry; Science & Technology - Other Topics; Materials Science
类目[WOS]	Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
收录类别	SCI ; EI
WOS记录号	WOS:000350329300058
公开日期	2016-05-03
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/228259]
专题	高能物理研究所_多学科研究中心
推荐引用方式 GB/T 7714	An, YK,Ren, Y,Yang, DY,et al. Oxygen Vacancy-Induced Room Temperature Ferromagnetism and Magnetoresistance in Fe-Doped In2O3 Films[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2015,119(8):4414-4421.
APA	An, YK,Ren, Y,Yang, DY,Wu, ZH,Liu, JW,&吴忠华.(2015).Oxygen Vacancy-Induced Room Temperature Ferromagnetism and Magnetoresistance in Fe-Doped In2O3 Films.JOURNAL OF PHYSICAL CHEMISTRY C,119(8),4414-4421.
MLA	An, YK,et al."Oxygen Vacancy-Induced Room Temperature Ferromagnetism and Magnetoresistance in Fe-Doped In2O3 Films".JOURNAL OF PHYSICAL CHEMISTRY C 119.8(2015):4414-4421.