Growth of bulk single crystals beta-FeSi2 by chemical vapour deposition

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	Growth of bulk single crystals beta-FeSi2 by chemical vapour deposition
	Li YC(李延春); Sun LL(孙力玲); Cao LM(曹立民); Zhao JH; Wang HY; Nan Y; Gao ZS; Wang WK
刊名	SCIENCE IN CHINA SERIES G-PHYSICS ASTRONOMY
	2003
卷号	46 期号:1 页码:47-51
ISSN号	1672-1799
通讯作者	Li, YC (reprint author), Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要	Bulk single crystals b-FeSi2, as a new photoelectric and thermoelectric material, has been successfully grown using chemical vapor transport technique by using iodine as transport agent in a sealed ampoule. The effects of crystal growth condition on quality and morphologies of the single crystals were studied. Both needle-like and grain-like single crystals were gained. By changing substrate temperature, tetrahedral high quality a-FeSi2 single crystals were also obtained.
学科主题	力学
类目[WOS]	Physics, Multidisciplinary
研究领域[WOS]	Physics
收录类别	SCI
语种	英语
WOS记录号	WOS:000181438600007
公开日期	2007-06-15 ; 2007-12-05 ; 2009-06-23
内容类型	期刊论文
源URL	[http://dspace.imech.ac.cn/handle/311007/16378]
专题	力学研究所_力学所知识产出(1956-2008)
推荐引用方式 GB/T 7714	Li YC,Sun LL,Cao LM,et al. Growth of bulk single crystals beta-FeSi2 by chemical vapour deposition[J]. SCIENCE IN CHINA SERIES G-PHYSICS ASTRONOMY,2003,46(1):47-51.
APA	李延春.,孙力玲.,曹立民.,Zhao JH.,Wang HY.,...&Wang WK.(2003).Growth of bulk single crystals beta-FeSi2 by chemical vapour deposition.SCIENCE IN CHINA SERIES G-PHYSICS ASTRONOMY,46(1),47-51.
MLA	李延春,et al."Growth of bulk single crystals beta-FeSi2 by chemical vapour deposition".SCIENCE IN CHINA SERIES G-PHYSICS ASTRONOMY 46.1(2003):47-51.