Space growth studies of Ce-doped Bi12SiO20 single crystal

	Space growth studies of Ce-doped Bi12SiO20 single crystal
	Zhou, YF; Wang, JC; Tang, LA; Pan, ZL; Chen, NF; Chen, WC; Huang, YY; He, W; Huang YY(黄宇营); He W(何伟)
刊名	MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
	2004
卷号	113 期号:3 页码:#REF!
关键词	Bridgman technique crystal growth bismuth compounds doping effects microgravity condition
通讯作者	Zhou, YF (reprint author), Chinese Acad Sci, Shanghai Inst Ceram, 1295 Dingxi Rd, Shanghai 200050, Peoples R China.
英文摘要	Ce-doped Bi12SiO20 (BSO) single crystal was grown on board of the Chinese Spacecraft-Shenzhou No. 3. A cylindrical crystal, 10 mm in diameter and 40 mm in length, was obtained. The morphology of crystals is significantly different for ground- and space-grown portions. The space- and ground-grown crystals have been characterized by Cc concentration distribution, X-ray rocking curve absorption spectrum and micro-Raman spectrum. The results show that the quality of Ce-doped BSO crystal grown in space is more homogeneous and more perfect than that of ground grown one. (C) 2004 Published by Elsevier B.V.
学科主题	Materials Science; Physics
类目[WOS]	Materials Science, Multidisciplinary ; Physics, Condensed Matter
收录类别	SCI
WOS记录号	WOS:000224946000001
公开日期	2016-05-03
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/226728]
专题	高能物理研究所_多学科研究中心
推荐引用方式 GB/T 7714	Zhou, YF,Wang, JC,Tang, LA,et al. Space growth studies of Ce-doped Bi12SiO20 single crystal[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,2004,113(3):#REF!.
APA	Zhou, YF.,Wang, JC.,Tang, LA.,Pan, ZL.,Chen, NF.,...&何伟.(2004).Space growth studies of Ce-doped Bi12SiO20 single crystal.MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,113(3),#REF!.
MLA	Zhou, YF,et al."Space growth studies of Ce-doped Bi12SiO20 single crystal".MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 113.3(2004):#REF!.