Identification of pore size in porous SiO2 thin film by positron annihilation

	Identification of pore size in porous SiO2 thin film by positron annihilation
	Zhang Z(张哲); Qin XB(秦秀波); Wang DN(王丹妮); Yu RS(于润升); Wang QZ(王巧占); Wang BY(王宝义); Zhang, Z; Qin, XB; Wang, DN; Yu, RS
刊名	CHINESE PHYSICS C
	2009
卷号	33 期号:2 页码:#REF!
关键词	Al-Si thin film porous SiO2 thin film positron annihilation
通讯作者	Wang, BY (reprint author), CAS, Inst High Energy Phys, Key Lab Nucl Anal Tech, Beijing 100049, Peoples R China.
英文摘要	Positron annihilation lifetime and Doppler broadening of annihilation line techniques have been used to obtain information about the small pore structure and size of porous SiO2 thin film produced by sputtered Al-Si thin film and etched Al-Si thin film. The film is prepared by an Al/Si 75:25 at.-% (Al75Si25) target with the radiofrequency (RF) power of 66 W at room temperature. A 5 wt.-% phosphoric acid solution is used to etch the Al cylinders. All the Al cylinders dissolved in the solution after 15 h at room temperature, and the sample is subsequently rinsed in pure water. In this way, the porous SiO2 on the Si substrate is produced. From our results, the values of all lifetime components in the spectra of Al-Si thin film are less than 1 ns, but the value of one of the lifetime components in the spectra of porous SiO2 thin film is tau = 7.80 ns. with these values of lifetime, RTE (Rectangular Pore Extension) model has been used to analyze the pore size.
学科主题	Physics
类目[WOS]	Physics, Nuclear ; Physics, Particles & Fields
收录类别	SCI
WOS记录号	WOS:000263137700015
公开日期	2016-05-03
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/226565]
专题	高能物理研究所_多学科研究中心
推荐引用方式 GB/T 7714	Zhang Z,Qin XB,Wang DN,et al. Identification of pore size in porous SiO2 thin film by positron annihilation[J]. CHINESE PHYSICS C,2009,33(2):#REF!.
APA	张哲.,秦秀波.,王丹妮.,于润升.,王巧占.,...&Wang, BY.(2009).Identification of pore size in porous SiO2 thin film by positron annihilation.CHINESE PHYSICS C,33(2),#REF!.
MLA	张哲,et al."Identification of pore size in porous SiO2 thin film by positron annihilation".CHINESE PHYSICS C 33.2(2009):#REF!.