Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation

	Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation
	Chen, J; Wang, JF; Zhang, JC; Wang, H; Huang, Y; Wang, YT; Yang, H; Jia, QJ; Jia QJ(贾全杰)
刊名	HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION
	2005
卷号	29 页码:#REF!
关键词	GaN metalorganic chemical vapor deposition (MOCVD) epitaxy lateral overgrowth stacking faults synchrotron radiation X-ray diffraction (XRD) pole figure
其他题名	侧向外延生长六方相GaN中堆垛层错的同步辐射表征
通讯作者	Chen, J (reprint author), Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
英文摘要	By means of low temperature photoluminescence and synchrotron radiation X-ray diffraction, existence of stacking faults has been determined in epitaxy lateral overgrowth GaN by metalorganic chemical vapor deposition.
学科主题	Physics
类目[WOS]	Physics, Nuclear ; Physics, Particles & Fields
收录类别	SCI
WOS记录号	WOS:000234206900010
公开日期	2016-05-03
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/225667]
专题	高能物理研究所_多学科研究中心
推荐引用方式 GB/T 7714	Chen, J,Wang, JF,Zhang, JC,et al. Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation[J]. HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,2005,29:#REF!.
APA	Chen, J.,Wang, JF.,Zhang, JC.,Wang, H.,Huang, Y.,...&贾全杰.(2005).Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation.HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,29,#REF!.
MLA	Chen, J,et al."Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation".HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION 29(2005):#REF!.