Effects of growth temperature of si buffer layer on structure and composition in GeSi epitaxy layers on Si wafer

	Effects of growth temperature of si buffer layer on structure and composition in GeSi epitaxy layers on Si wafer
	Wu, XS; Cai, HL; Tan, WS; Zhai, ZY; Wu, ZH; Jia, QJ; Cheng, HH; Jiang, SS; Wu ZH(吴忠华); Jia QJ(贾全杰)
刊名	HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION
	2005
卷号	29 页码:#REF!
关键词	high resolution X-ray diffraction with synchrotron radiation buffer layer grown at low temperature grown temperature
其他题名	Si缓冲层的生长温度对SiGe组分、结构的影响
通讯作者	Wu, XS (reprint author), Nanjing Univ, Dept Phys, Solid State Microstruct Lab, Ctr Adv Studies Sci & Technol Microstruct, Nanjing 210093, Peoples R China.
英文摘要	This study systematically addresses the effect of temperature on the growth of SiGe compliant substrates. The characteristics of the films were experimentally determined by various techniques, including high resolution X-ray diffraction (HRXRD), surface diffraction, X-ray reflectivity with synchrotron radiation, transmission electron microscopy (TEM) and atomic force microscopy (AFM). In the growth temperature range from 350-600 degrees C, X-ray diffraction shows that the film was strain relaxed with a Ge content of 32 +/- 2%, and TEM indicates that the film is free from dislocations in the temperature range, 400-500 degrees C. AFM reveals that the optimal temperature for the growth is 450 degrees C, with a root mean squared surface roughness of 15 angstrom.
学科主题	Physics
类目[WOS]	Physics, Nuclear ; Physics, Particles & Fields
收录类别	SCI
WOS记录号	WOS:000234206900007
公开日期	2016-05-03
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/225569]
专题	高能物理研究所_多学科研究中心
推荐引用方式 GB/T 7714	Wu, XS,Cai, HL,Tan, WS,et al. Effects of growth temperature of si buffer layer on structure and composition in GeSi epitaxy layers on Si wafer[J]. HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,2005,29:#REF!.
APA	Wu, XS.,Cai, HL.,Tan, WS.,Zhai, ZY.,Wu, ZH.,...&贾全杰.(2005).Effects of growth temperature of si buffer layer on structure and composition in GeSi epitaxy layers on Si wafer.HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION,29,#REF!.
MLA	Wu, XS,et al."Effects of growth temperature of si buffer layer on structure and composition in GeSi epitaxy layers on Si wafer".HIGH ENERGY PHYSICS AND NUCLEAR PHYSICS-CHINESE EDITION 29(2005):#REF!.