Oxygen vacancy-induced ferromagnetism in un-doped ZnO thin films

	Oxygen vacancy-induced ferromagnetism in un-doped ZnO thin films
	Zhan, P; Wang, WP; Liu, C; Hu, Y; Li, ZC; Zhang, ZJ; Zhang, P; Wang, BY; Cao, XZ; 张鹏(正)
刊名	JOURNAL OF APPLIED PHYSICS
	2012
卷号	111 期号:3 页码:33501
英文摘要	ZnO films became ferromagnetic when defects were introduced by thermal-annealing in flowing argon. This ferromagnetism, as shown by the photoluminescence measurement and positron annihilation analysis, was induced by the singly occupied oxygen vacancy with a saturated magnetization dependent positively on the amount of this vacancy. This study clarified the origin of the ferromagnetism of un-doped ZnO thin films and provides possibly an alternative way to prepare ferromagnetic ZnO films. (C) 2012 American Institute of Physics. [doi:10.1063/1.3679560]
学科主题	Physics
收录类别	SCI
WOS记录号	WOS:000301029800017
公开日期	2016-05-03
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/224524]
专题	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Zhan, P,Wang, WP,Liu, C,et al. Oxygen vacancy-induced ferromagnetism in un-doped ZnO thin films[J]. JOURNAL OF APPLIED PHYSICS,2012,111(3):33501.
APA	Zhan, P.,Wang, WP.,Liu, C.,Hu, Y.,Li, ZC.,...&曹兴忠.(2012).Oxygen vacancy-induced ferromagnetism in un-doped ZnO thin films.JOURNAL OF APPLIED PHYSICS,111(3),33501.
MLA	Zhan, P,et al."Oxygen vacancy-induced ferromagnetism in un-doped ZnO thin films".JOURNAL OF APPLIED PHYSICS 111.3(2012):33501.