Enhanced thermoelectric performance of a BiCuSeO system via band gap tuning

	Enhanced thermoelectric performance of a BiCuSeO system via band gap tuning
	Liu, Y; Lan, JL; 徐伟;Xu, W; Liu, YC; Pei, YL; Cheng, B; Liu, DB; Lin, YH; Zhao, LD
刊名	CHEMICAL COMMUNICATIONS
	2013
卷号	49 期号:73 页码:8075-8077
英文摘要	Upon 20% Te substitution, the band gap decreases from 0.8 eV to 0.65 eV. Rising temperature promotes minority carrier jumps across the band gap, thereby improving electrical conductivity. With low thermal conductivity and large Seebeck coefficients, a remarkable ZT of 0.71 at 873 K is achieved for BiCuSe0.94Te0.06O.
学科主题	Chemistry
收录类别	SCI
WOS记录号	WOS:000323195600028
公开日期	2016-05-03
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/224305]
专题	高能物理研究所_多学科研究中心
推荐引用方式 GB/T 7714	Liu, Y,Lan, JL,徐伟；Xu, W,et al. Enhanced thermoelectric performance of a BiCuSeO system via band gap tuning[J]. CHEMICAL COMMUNICATIONS,2013,49(73):8075-8077.
APA	Liu, Y.,Lan, JL.,徐伟；Xu, W.,Liu, YC.,Pei, YL.,...&Zhao, LD.(2013).Enhanced thermoelectric performance of a BiCuSeO system via band gap tuning.CHEMICAL COMMUNICATIONS,49(73),8075-8077.
MLA	Liu, Y,et al."Enhanced thermoelectric performance of a BiCuSeO system via band gap tuning".CHEMICAL COMMUNICATIONS 49.73(2013):8075-8077.