Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres

	Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres
	Wei, TB; Chen, Y; Hu, Q; Yang, JK; Huo, ZQ; Duan, RF; Wang, JX; Zeng, YP; Li, JM; Liao, YX
刊名	MATERIALS LETTERS
	2012
卷号	68 页码:327-330
关键词	HVPE GaN CsCl Nano-island
英文摘要	Thick GaN films were overgrown by HVPE on nano-island templates, which was fabricated by inductively coupled plasma etching using self-assembled CsCl islands as etch masks. The truncated cone-shape nano-islands exhibited significant effects on improvement of crystalline quality and reduction of crack density for subsequent GaN growth. Photoluminescence and micro-Raman measurements showed improved optical properties and partial strain relaxation in the overgrown GaN when compared to that grown on as-grown template, originated from the initial selective growth. Compared to conventional epitaxial lateral overgrown GaN, the economic and rapid method would put forward new promising pathway to fabricate high quality GaN. (C) 2011 Elsevier B.V. All rights reserved.
学科主题	Materials Science; Physics
收录类别	SCI
WOS记录号	WOS:000300480600094
公开日期	2016-05-03
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/223941]
专题	高能物理研究所_多学科研究中心
推荐引用方式 GB/T 7714	Wei, TB,Chen, Y,Hu, Q,et al. Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres[J]. MATERIALS LETTERS,2012,68:327-330.
APA	Wei, TB.,Chen, Y.,Hu, Q.,Yang, JK.,Huo, ZQ.,...&伊福廷.(2012).Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres.MATERIALS LETTERS,68,327-330.
MLA	Wei, TB,et al."Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres".MATERIALS LETTERS 68(2012):327-330.