Etching Behavior of GaN/GaAs(001) Epilayers Grown by MOVPE

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	Etching Behavior of GaN/GaAs(001) Epilayers Grown by MOVPE
	Shen Xiaoming ; Feng Zhihong ; Feng Gan ; Fu Yi ; Zhang Baoshun ; Sun Yuanping ; Zhang Zehong ; Yang Hui
刊名	半导体学报
	2002
卷号	23 期号:7 页码:707-712
中文摘要	wet etching characteristics of cubic gan (c-gan) thin films grown on gaas(001) by metalorganic vapor phase epitaxy (movpe) are investigated. the samples are etched in hcl, h_3po_4, koh aqueous solutions, and molten koh at temperatures in the range of 90～300 ℃. it is found that different solution produces different etch figure on the surfaces of a sample. koh-based solutions produce rectangular pits rather than square pits. the etch pits elongate in [1(1-bar)0] direction, indicating asymmetric etching behavior in the two orthogonal <110> directions. an explanation based on relative reactivity of the various crystallographic planes is employed to interpret qualitatively the asymmetric etching behavior. in addition, it is found that koh aqueous solution would be more suitable than molten koh and the two acids for the evaluation of stacking faults in c-gan epilayers.
英文摘要	wet etching characteristics of cubic gan (c-gan) thin films grown on gaas(001) by metalorganic vapor phase epitaxy (movpe) are investigated. the samples are etched in hcl, h_3po_4, koh aqueous solutions, and molten koh at temperatures in the range of 90～300 ℃. it is found that different solution produces different etch figure on the surfaces of a sample. koh-based solutions produce rectangular pits rather than square pits. the etch pits elongate in [1(1-bar)0] direction, indicating asymmetric etching behavior in the two orthogonal <110> directions. an explanation based on relative reactivity of the various crystallographic planes is employed to interpret qualitatively the asymmetric etching behavior. in addition, it is found that koh aqueous solution would be more suitable than molten koh and the two acids for the evaluation of stacking faults in c-gan epilayers.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:08:18导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:08:18z (gmt). no. of bitstreams: 1 5084.pdf: 359496 bytes, checksum: 0a86b6cb9cdea93752e9f5068902638f (md5) previous issue date: 2002; 国家自然科学基金（批准号：698251 7）,nsfc-rgc联合基金（批准号：5 1161953，n-hku 28/ ）; institute of semiconductors, the chinese academy of sciences
学科主题	光电子学
收录类别	CSCD
资助信息	国家自然科学基金（批准号：698251 7）,nsfc-rgc联合基金（批准号：5 1161953，n-hku 28/ ）
语种	英语
公开日期	2010-11-23 ; 2011-04-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/18075]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Shen Xiaoming,Feng Zhihong,Feng Gan,et al. Etching Behavior of GaN/GaAs(001) Epilayers Grown by MOVPE[J]. 半导体学报,2002,23(7):707-712.
APA	Shen Xiaoming.,Feng Zhihong.,Feng Gan.,Fu Yi.,Zhang Baoshun.,...&Yang Hui.(2002).Etching Behavior of GaN/GaAs(001) Epilayers Grown by MOVPE.半导体学报,23(7),707-712.
MLA	Shen Xiaoming,et al."Etching Behavior of GaN/GaAs(001) Epilayers Grown by MOVPE".半导体学报 23.7(2002):707-712.