Stimulated emission at 288 nm from silicon-doped AlGaN-based multiple-quantum-well laser

	Stimulated emission at 288 nm from silicon-doped AlGaN-based multiple-quantum-well laser
	Yingdong Tian ; Jianchang Yan ; Yun Zhang ; Xiang Chen ; Yanan Guo ; Peipei Cong ; Lili Sun ; Qinjin Wang ; Enqing Guo ; Xuecheng Wei ; Junxi Wang ; Jinmin Li
刊名	optics express
	2015
卷号	23 期号:9 页码:11334-11340
学科主题	半导体器件
收录类别	SCI
语种	英语
公开日期	2016-04-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/27008]
专题	半导体研究所_中科院半导体照明研发中心
推荐引用方式 GB/T 7714	Yingdong Tian,Jianchang Yan,Yun Zhang,et al. Stimulated emission at 288 nm from silicon-doped AlGaN-based multiple-quantum-well laser[J]. optics express,2015,23(9):11334-11340.
APA	Yingdong Tian.,Jianchang Yan.,Yun Zhang.,Xiang Chen.,Yanan Guo.,...&Jinmin Li.(2015).Stimulated emission at 288 nm from silicon-doped AlGaN-based multiple-quantum-well laser.optics express,23(9),11334-11340.
MLA	Yingdong Tian,et al."Stimulated emission at 288 nm from silicon-doped AlGaN-based multiple-quantum-well laser".optics express 23.9(2015):11334-11340.