Electron transport behaviors through donor-induced quantum dot array in heavily n-doped junctionless nanowire transistors
Liuhong Ma ; Weihua Han ; Hao Wang ; Wenting Hong ; Qifeng Lyu ; Xiang Yang ; Fuhua Yang
刊名j. appl. phys
2015
卷号117页码:034505
学科主题微电子学
收录类别SCI
语种英语
公开日期2016-04-08
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/26979]  
专题半导体研究所_半导体集成技术工程研究中心
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Liuhong Ma,Weihua Han,Hao Wang,et al. Electron transport behaviors through donor-induced quantum dot array in heavily n-doped junctionless nanowire transistors[J]. j. appl. phys,2015,117:034505.
APA Liuhong Ma.,Weihua Han.,Hao Wang.,Wenting Hong.,Qifeng Lyu.,...&Fuhua Yang.(2015).Electron transport behaviors through donor-induced quantum dot array in heavily n-doped junctionless nanowire transistors.j. appl. phys,117,034505.
MLA Liuhong Ma,et al."Electron transport behaviors through donor-induced quantum dot array in heavily n-doped junctionless nanowire transistors".j. appl. phys 117(2015):034505.
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