Electron transport behaviors through donor-induced quantum dot array in heavily n-doped junctionless nanowire transistors | |
Liuhong Ma ; Weihua Han ; Hao Wang ; Wenting Hong ; Qifeng Lyu ; Xiang Yang ; Fuhua Yang | |
刊名 | j. appl. phys
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2015 | |
卷号 | 117页码:034505 |
学科主题 | 微电子学 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2016-04-08 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/26979] ![]() |
专题 | 半导体研究所_半导体集成技术工程研究中心 |
推荐引用方式 GB/T 7714 | Liuhong Ma,Weihua Han,Hao Wang,et al. Electron transport behaviors through donor-induced quantum dot array in heavily n-doped junctionless nanowire transistors[J]. j. appl. phys,2015,117:034505. |
APA | Liuhong Ma.,Weihua Han.,Hao Wang.,Wenting Hong.,Qifeng Lyu.,...&Fuhua Yang.(2015).Electron transport behaviors through donor-induced quantum dot array in heavily n-doped junctionless nanowire transistors.j. appl. phys,117,034505. |
MLA | Liuhong Ma,et al."Electron transport behaviors through donor-induced quantum dot array in heavily n-doped junctionless nanowire transistors".j. appl. phys 117(2015):034505. |
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