Improved hole distribution in InGaN light-emitting diodes with InGaN-GaN barriers of decreasing indium composition | |
Yujue Yang ; Yiping Zeng | |
刊名 | physica status solidi a-applications and materials science |
2015 | |
卷号 | 212期号:8页码:1805-1809 |
学科主题 | 半导体材料 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2016-03-29 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/26852] |
专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
推荐引用方式 GB/T 7714 | Yujue Yang,Yiping Zeng. Improved hole distribution in InGaN light-emitting diodes with InGaN-GaN barriers of decreasing indium composition[J]. physica status solidi a-applications and materials science,2015,212(8):1805-1809. |
APA | Yujue Yang,&Yiping Zeng.(2015).Improved hole distribution in InGaN light-emitting diodes with InGaN-GaN barriers of decreasing indium composition.physica status solidi a-applications and materials science,212(8),1805-1809. |
MLA | Yujue Yang,et al."Improved hole distribution in InGaN light-emitting diodes with InGaN-GaN barriers of decreasing indium composition".physica status solidi a-applications and materials science 212.8(2015):1805-1809. |
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