Alternating InGaN barriers with GaN barriers for enhancing optical performance in InGaN light-emitting diodes | |
Yujue Yang ; Yiping Zeng | |
刊名 | journal of applied physics |
2015 | |
卷号 | 117期号:3页码:035705 |
学科主题 | 半导体材料 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2016-03-29 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/26847] |
专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
推荐引用方式 GB/T 7714 | Yujue Yang,Yiping Zeng. Alternating InGaN barriers with GaN barriers for enhancing optical performance in InGaN light-emitting diodes[J]. journal of applied physics,2015,117(3):035705. |
APA | Yujue Yang,&Yiping Zeng.(2015).Alternating InGaN barriers with GaN barriers for enhancing optical performance in InGaN light-emitting diodes.journal of applied physics,117(3),035705. |
MLA | Yujue Yang,et al."Alternating InGaN barriers with GaN barriers for enhancing optical performance in InGaN light-emitting diodes".journal of applied physics 117.3(2015):035705. |
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