Effects of strain on the band gap and effective mass in two-dimensional monolayer GaX (X = S, Se, Te) | |
Le Huang ; Zhanghui Chen ; Jingbo Li | |
刊名 | rsc advances
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2015 | |
卷号 | 5期号:8页码:5788-5794 |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2016-03-29 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/26890] ![]() |
专题 | 半导体研究所_半导体超晶格国家重点实验室 |
推荐引用方式 GB/T 7714 | Le Huang,Zhanghui Chen,Jingbo Li. Effects of strain on the band gap and effective mass in two-dimensional monolayer GaX (X = S, Se, Te)[J]. rsc advances,2015,5(8):5788-5794. |
APA | Le Huang,Zhanghui Chen,&Jingbo Li.(2015).Effects of strain on the band gap and effective mass in two-dimensional monolayer GaX (X = S, Se, Te).rsc advances,5(8),5788-5794. |
MLA | Le Huang,et al."Effects of strain on the band gap and effective mass in two-dimensional monolayer GaX (X = S, Se, Te)".rsc advances 5.8(2015):5788-5794. |
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