Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

	Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence
	Hai-Ming Ji ; Baolai Liang ; Paul J. Simmonds ; Bor-Chau Juang ; Tao Yang ; Robert J. Young ; Diana L.Huffaker
刊名	applied physics letters
	2015
卷号	106 页码:103104
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2016-03-22
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26732]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Hai-Ming Ji,Baolai Liang,Paul J. Simmonds,et al. Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence[J]. applied physics letters,2015,106:103104.
APA	Hai-Ming Ji.,Baolai Liang.,Paul J. Simmonds.,Bor-Chau Juang.,Tao Yang.,...&Diana L.Huffaker.(2015).Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence.applied physics letters,106,103104.
MLA	Hai-Ming Ji,et al."Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence".applied physics letters 106(2015):103104.