Passive Q-Switching in a Flash-Lamp Pumped Nd∶YAG Laser with Ion-Implanted GaAs Wafer

	Passive Q-Switching in a Flash-Lamp Pumped Nd∶YAG Laser with Ion-Implanted GaAs Wafer
	Wang Yonggang ; Li Chaoyang ; Ma Xiaoyu ; Zhang Zhigang
刊名	半导体学报
	2004
卷号	25 期号:2 页码:148-151
中文摘要	A passive Q-switched flash-lamp-pumped Nd:YAG laser with the ion-implanted semi-insulating GaAs water is reported．The wafer is implanted with 400keV As~+ ions in the concentration of 10~(16)cm~(-2). Using GaAs wafer as an absorber and an output coupler．62ns pulse duration of single pulse is obtained.
学科主题	半导体器件
收录类别	CSCD
语种	英语
公开日期	2010-11-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/17617]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang Yonggang,Li Chaoyang,Ma Xiaoyu,et al. Passive Q-Switching in a Flash-Lamp Pumped Nd∶YAG Laser with Ion-Implanted GaAs Wafer[J]. 半导体学报,2004,25(2):148-151.
APA	Wang Yonggang,Li Chaoyang,Ma Xiaoyu,&Zhang Zhigang.(2004).Passive Q-Switching in a Flash-Lamp Pumped Nd∶YAG Laser with Ion-Implanted GaAs Wafer.半导体学报,25(2),148-151.
MLA	Wang Yonggang,et al."Passive Q-Switching in a Flash-Lamp Pumped Nd∶YAG Laser with Ion-Implanted GaAs Wafer".半导体学报 25.2(2004):148-151.