A 1.3μm Low-Threshold Edge-Emitting Laser with AlInAs-Oxide Confinement Layers

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	A 1.3μm Low-Threshold Edge-Emitting Laser with AlInAs-Oxide Confinement Layers
	Wang Wei; Wang Wei
刊名	半导体学报
	2004
卷号	25 期号:6 页码:620-625
中文摘要	A 1.3μm low-threshold edge-emitting AlGaInAs multiple-quantum-well(MQW) laser with AlInAs-oxide confinement layers is fabricated.The Al-contained waveguide layers upper and low the active layers are oxidized as current-confined layers using wet-oxidation technique.This structure provides excellent current and optical confinement,resulting in 12.9mA of a low continuous wave threshold current and 0.47W/A of a high slope efficiency of per facet at room temperature for a 5-μm-wide current aperture.Compared with the ridge waveguide laser with the same-width ridge,the threshold current of the AlInAs-oxide confinement laser has decreased by 31.7% and the slope efficiency has increased a little.Both low threshold and high slope efficiency indicate that lateral current confinement can be realized by oxidizing AlInAs waveguide layers.The full width of half maximum angles of the Al-InAs-oxide confinement laser are 21.6° for the horizontal and 36.1° for the vertical,which demonstrate the ability of the AlInAs oxide in preventing the optical field from spreading laterally.
英文摘要	A 1.3μm low-threshold edge-emitting AlGaInAs multiple-quantum-well(MQW) laser with AlInAs-oxide confinement layers is fabricated.The Al-contained waveguide layers upper and low the active layers are oxidized as current-confined layers using wet-oxidation technique.This structure provides excellent current and optical confinement,resulting in 12.9mA of a low continuous wave threshold current and 0.47W/A of a high slope efficiency of per facet at room temperature for a 5-μm-wide current aperture.Compared with the ridge waveguide laser with the same-width ridge,the threshold current of the AlInAs-oxide confinement laser has decreased by 31.7% and the slope efficiency has increased a little.Both low threshold and high slope efficiency indicate that lateral current confinement can be realized by oxidizing AlInAs waveguide layers.The full width of half maximum angles of the Al-InAs-oxide confinement laser are 21.6° for the horizontal and 36.1° for the vertical,which demonstrate the ability of the AlInAs oxide in preventing the optical field from spreading laterally.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:06:07导入数据到SEMI-IR的IR; Made available in DSpace on 2010-11-23T05:06:07Z (GMT). No. of bitstreams: 1 4704.pdf: 138923 bytes, checksum: cb42bae086be1ec28e5009508e256302 (MD5) Previous issue date: 2004; National Natural Science Foundation of China; Optic - Electronic Research and Development Center, Institrte of Semiconductors,The Chinese Academy of Sciences
学科主题	半导体材料
收录类别	CSCD
资助信息	National Natural Science Foundation of China
语种	英语
公开日期	2010-11-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/17375]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang Wei,Wang Wei. A 1.3μm Low-Threshold Edge-Emitting Laser with AlInAs-Oxide Confinement Layers[J]. 半导体学报,2004,25(6):620-625.
APA	Wang Wei,&Wang Wei.(2004).A 1.3μm Low-Threshold Edge-Emitting Laser with AlInAs-Oxide Confinement Layers.半导体学报,25(6),620-625.
MLA	Wang Wei,et al."A 1.3μm Low-Threshold Edge-Emitting Laser with AlInAs-Oxide Confinement Layers".半导体学报 25.6(2004):620-625.