Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides

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	Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides
	Zheng Zhongshan ; Liu Zhongli ; Zhang Guoqiang ; Li Ning ; Li Guohua ; Ma Hongzhi ; Zhang Enxia ; Zhang Zhengxuan ; Wang Xi
刊名	半导体学报
	2005
卷号	26 期号:5 页码:862-866
中文摘要	in order to improve the total-dose radiation hardness of the buried oxides(box) in the structure of separa tion-by-implanted-oxygen(simox) silicon-on-insulator(soi), nitrogen ions are implanted into the buried oxides with two different doses,2 × 1015 and 3 × 1015 cm-2 , respectively. the experimental results show that the radiation hardness of the buried oxides is very sensitive to the doses of nitrogen implantation for a lower dose of irradiation with a co-60 source. despite the small difference between the doses of nitrogen implantation, the nitrogen-implanted 2 × 1015 cm-2 box has a much higher hardness than the control sample (i. e. the buried oxide without receiving nitrogen implantation) for a total-dose irradiation of 5 × 104rad(si), whereas the nitrogen-implanted 3 × 1015 cm-2 box has a lower hardness than the control sample. however,this sensitivity of radiation hardness to the doses of nitrogen implantation reduces with the increasing total-dose of irradiation (from 5 × 104 to 5 × 105 rad (si)). the radiation hardness of box is characterized by mos high-frequency (hf) capacitance-voltage (c-v) technique after the top silicon layers are removed. in addition, the abnormal hf c-v curve of the metal-silicon-box-silicon(msos) structure is observed and explained.
英文摘要	in order to improve the total-dose radiation hardness of the buried oxides(box) in the structure of separa tion-by-implanted-oxygen(simox) silicon-on-insulator(soi), nitrogen ions are implanted into the buried oxides with two different doses,2 × 1015 and 3 × 1015 cm-2 , respectively. the experimental results show that the radiation hardness of the buried oxides is very sensitive to the doses of nitrogen implantation for a lower dose of irradiation with a co-60 source. despite the small difference between the doses of nitrogen implantation, the nitrogen-implanted 2 × 1015 cm-2 box has a much higher hardness than the control sample (i. e. the buried oxide without receiving nitrogen implantation) for a total-dose irradiation of 5 × 104rad(si), whereas the nitrogen-implanted 3 × 1015 cm-2 box has a lower hardness than the control sample. however,this sensitivity of radiation hardness to the doses of nitrogen implantation reduces with the increasing total-dose of irradiation (from 5 × 104 to 5 × 105 rad (si)). the radiation hardness of box is characterized by mos high-frequency (hf) capacitance-voltage (c-v) technique after the top silicon layers are removed. in addition, the abnormal hf c-v curve of the metal-silicon-box-silicon(msos) structure is observed and explained.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:04:37导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:04:38z (gmt). no. of bitstreams: 1 4491.pdf: 459152 bytes, checksum: 1f70fe1f8ebb53d8f808e4e046652db4 (md5) previous issue date: 2005; microelectronics r&d center, institute of semiconductors, chinese academy of sciences;shanghai institute of microsystem and information technology, chinese academy of sciences
学科主题	微电子学
收录类别	CSCD
语种	英语
公开日期	2010-11-23 ; 2011-04-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/17023]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zheng Zhongshan,Liu Zhongli,Zhang Guoqiang,et al. Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides[J]. 半导体学报,2005,26(5):862-866.
APA	Zheng Zhongshan.,Liu Zhongli.,Zhang Guoqiang.,Li Ning.,Li Guohua.,...&Wang Xi.(2005).Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides.半导体学报,26(5),862-866.
MLA	Zheng Zhongshan,et al."Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides".半导体学报 26.5(2005):862-866.