Effects of Thickness on Properties of ZnO Films  Grown on Si by MOCVD

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	Effects of Thickness on Properties of ZnO Films Grown on Si by MOCVD
	Wang Jun; Wang Jun
刊名	半导体学报
	2005
卷号	26 期号:11 页码:2069-2073
中文摘要	high quality zno films are successfully grown on si（100） substrates by metal-organic chemical vapor deposition at 300℃. the effects of the thickness of the zno films on crystal structure, surface morphology,and optical properties are investigated using x-ray diffraction, scanning probe microscopy,and photoluminescence spectra, respectively. it is shown that the zno films grown on si substrates have a highly-preferential c-axis orientation,but it is difficult to obtain the better structural and optical properties of the zno films with the increasing of thickness. it is maybe due to that the grain size and the growth model are changed in the growth process.
学科主题	半导体材料
收录类别	CSCD
语种	英语
公开日期	2010-11-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/16887]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang Jun,Wang Jun. Effects of Thickness on Properties of ZnO Films Grown on Si by MOCVD[J]. 半导体学报,2005,26(11):2069-2073.
APA	Wang Jun,&Wang Jun.(2005).Effects of Thickness on Properties of ZnO Films Grown on Si by MOCVD.半导体学报,26(11),2069-2073.
MLA	Wang Jun,et al."Effects of Thickness on Properties of ZnO Films Grown on Si by MOCVD".半导体学报 26.11(2005):2069-2073.