Simulation of a Monolithic Integrated CMOS Preamplifier  for Neural Recordings

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	Simulation of a Monolithic Integrated CMOS Preamplifier for Neural Recordings
	Pei Weihua
刊名	半导体学报
	2005
卷号	26 期号:12 页码:2275-2280
中文摘要	a monolithic integrated cmos preamplifier is presented for neural recording applications. two ac-coupied capacitors are used to eliminate the large and random dc offsets existing in the electrode-electrolyte interface. diode-connected nmos transistors with a negative voltage between the gate and source are candidates for the large resistors necessary for the preamplifier. a novel analysis is given to determine the noise power spectral density. simulation results show that the two-stage cmos preamplifier in a closed-loop capacitive feedback configuration provides an ac in-band gain of 38.8db,a dc gain of 0,and an input-referred noise of 277nvmax, integrated from 0. 1hz to 1khz. the preamplifier can eliminate the dc offset voltage and has low input-referred noise by novel circuit configuration and theoretical analysis.
学科主题	光电子学
收录类别	CSCD
资助信息	国家高技术研究发展计划,国家自然科学基金资助项目
语种	英语
公开日期	2010-11-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/16815]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Pei Weihua. Simulation of a Monolithic Integrated CMOS Preamplifier for Neural Recordings[J]. 半导体学报,2005,26(12):2275-2280.
APA	Pei Weihua.(2005).Simulation of a Monolithic Integrated CMOS Preamplifier for Neural Recordings.半导体学报,26(12),2275-2280.
MLA	Pei Weihua."Simulation of a Monolithic Integrated CMOS Preamplifier for Neural Recordings".半导体学报 26.12(2005):2275-2280.