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	Fabrication of an AlAs/In0.53Ga0.47As/InAs Resonant Tunneling Diode on InP Substrate for High-Speed Circuit Applications
	Zhang Yang
刊名	半导体学报
	2006
卷号	27期号:6页码:959-962
中文摘要	a high performance alas/in0.53 ga0.47 as/inas resonant tunneling diode （rtd） on inp substrate is fabricated by inductively coupled plasma etching. this rtd has a peak-to-valley current ratio （pvcr） of 7. 57 and a peak current density jp = 39.08ka/cm^2 under forward bias at room temperature. under reverse bias, the corresponding values are 7.93 and 34.56ka/cm^2 . a resistive cutoff frequency of 18.75ghz is obtained with the effect of a parasitic probe pad and wire. the slightly asymmetrical current-voltage characteristics with a nominally symmetrical structure are also discussed.
英文摘要	a high performance alas/in0.53 ga0.47 as/inas resonant tunneling diode （rtd） on inp substrate is fabricated by inductively coupled plasma etching. this rtd has a peak-to-valley current ratio （pvcr） of 7. 57 and a peak current density jp = 39.08ka/cm^2 under forward bias at room temperature. under reverse bias, the corresponding values are 7.93 and 34.56ka/cm^2 . a resistive cutoff frequency of 18.75ghz is obtained with the effect of a parasitic probe pad and wire. the slightly asymmetrical current-voltage characteristics with a nominally symmetrical structure are also discussed.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:02:39导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:02:39z (gmt). no. of bitstreams: 1 4188.pdf: 330269 bytes, checksum: 3641106a7c26cac632d37b9814d1fcaf (md5) previous issue date: 2006; 国家高技术研究发展计划资助项目; research center of semiconductor integration technology, institute of semiconductors, chinese academy of sciences;novel semiconductor material laboratory, institute of semiconductors, chinese academy of sciences
学科主题	半导体材料
收录类别	CSCD
资助信息	国家高技术研究发展计划资助项目
语种	英语
公开日期	2010-11-23 ; 2011-04-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/16515]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang Yang. Fabrication of an AlAs/In0.53Ga0.47As/InAs Resonant Tunneling Diode on InP Substrate for High-Speed Circuit Applications[J]. 半导体学报,2006,27(6):959-962.
APA	Zhang Yang.(2006).Fabrication of an AlAs/In0.53Ga0.47As/InAs Resonant Tunneling Diode on InP Substrate for High-Speed Circuit Applications.半导体学报,27(6),959-962.
MLA	Zhang Yang."Fabrication of an AlAs/In0.53Ga0.47As/InAs Resonant Tunneling Diode on InP Substrate for High-Speed Circuit Applications".半导体学报 27.6(2006):959-962.

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