Tunnel magnetoresistance in thermally robust Mo/CoFeB/MgO tunnel junction with perpendicular magnetic anisotropy

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	Tunnel magnetoresistance in thermally robust Mo/CoFeB/MgO tunnel junction with perpendicular magnetic anisotropy
	Fang, B(方彬); Zhang, X; Zhang, S(); Zeng, ZM(曾中明); Cai, JW
刊名	AIP ADVANCES
	2015
卷号	5 期号:6 页码:6
通讯作者	Zeng, ZM (曾中明)
英文摘要	We report on tunnel magnetoresistance and electric-field effect in the Mo buffered and capped CoFeB/MgO magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy. A large tunnel magnetoresistance of 120% is achieved. Furthermore, this structure shows greatly improved thermal stability and stronger electric-field-induced modulation effect in comparison with the Ta/CoFeB/MgO-based MTJs. These results suggest that the Mo-based MTJs are more desirable for next generation spintronic devices. (C) 2015 Author(s).
收录类别	SCI
语种	英语
公开日期	2016-02-26
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/3359]
专题	苏州纳米技术与纳米仿生研究所_纳米加工公共平台
推荐引用方式 GB/T 7714	Fang, B,Zhang, X,Zhang, S,et al. Tunnel magnetoresistance in thermally robust Mo/CoFeB/MgO tunnel junction with perpendicular magnetic anisotropy[J]. AIP ADVANCES,2015,5(6):6.
APA	Fang, B,Zhang, X,Zhang, S,Zeng, ZM,&Cai, JW.(2015).Tunnel magnetoresistance in thermally robust Mo/CoFeB/MgO tunnel junction with perpendicular magnetic anisotropy.AIP ADVANCES,5(6),6.
MLA	Fang, B,et al."Tunnel magnetoresistance in thermally robust Mo/CoFeB/MgO tunnel junction with perpendicular magnetic anisotropy".AIP ADVANCES 5.6(2015):6.