Enhanced stability of black phosphorus field-effect transistors with SiO2 passivation

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	Enhanced stability of black phosphorus field-effect transistors with SiO2 passivation
	Wan, BS; Yang, BC; Wang, Y; Zhang, JY; Zeng, ZM(曾中明); Liu, ZY; Wang, WH
刊名	NANOTECHNOLOGY
	2015
卷号	26 期号:43 页码:6
关键词	black phosphorus field effect transistor stability
通讯作者	Zhang, JY
英文摘要	Few-layer black phosphorus (BP) has attracted much attention due to its high mobility and suitable band gap for potential applic5ations in optoelectronics and flexible devices. However, its instability under ambient conditions limits its practical applications. Our investigations indicate that by passivation of the mechanically exfoliated BP flakes with a SiO2 layer, the fabricated BP field-effect transistors (FETs) exhibit greatly enhanced environmental stability. Compared to the unpassivated BP devices, which show a fast drop of on/off current ratio by a factor of 10 after one week of ambient exposure, the SiO2-passivated BP devices display a high retained on/off current ratio of over 600 after one week of exposure, just a little lower than the initial value of 810. Our investigations provide an effective route to passivate the few-layer BPs for enhancement of their environmental stability.
收录类别	SCI
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/3286]
专题	苏州纳米技术与纳米仿生研究所_纳米加工公共平台
推荐引用方式 GB/T 7714	Wan, BS,Yang, BC,Wang, Y,et al. Enhanced stability of black phosphorus field-effect transistors with SiO2 passivation[J]. NANOTECHNOLOGY,2015,26(43):6.
APA	Wan, BS.,Yang, BC.,Wang, Y.,Zhang, JY.,Zeng, ZM.,...&Wang, WH.(2015).Enhanced stability of black phosphorus field-effect transistors with SiO2 passivation.NANOTECHNOLOGY,26(43),6.
MLA	Wan, BS,et al."Enhanced stability of black phosphorus field-effect transistors with SiO2 passivation".NANOTECHNOLOGY 26.43(2015):6.