Smaller Ge Quantum Dots Obtained by ArF Excimer Laser Annealing | |
Zeng Yugang ; Han Genquan ; Yu Jinzhong | |
刊名 | 半导体学报 |
2008 | |
卷号 | 29期号:4页码:641-644 |
中文摘要 | ge self-assembled quantum dots (saqds) are grown with a self-assembled uhv/cvd epitaxy system. then,the as-grown ge quantum dots are annealed by arf excimer laser. in the ultra-shot laser pulse duration,~20ns, bulk diffusion is forbidden, and only surface diffusion occurs, resulting in a laser induced quantum dot (liqd). the diameter of the liqd is 20~25nm which is much smaller than the as-grown dot and the liqd has a higher density of about 6 × 10~(10)cm~(-2). the surface morphology evolution is investigated by afm. |
英文摘要 | ge self-assembled quantum dots (saqds) are grown with a self-assembled uhv/cvd epitaxy system. then,the as-grown ge quantum dots are annealed by arf excimer laser. in the ultra-shot laser pulse duration,~20ns, bulk diffusion is forbidden, and only surface diffusion occurs, resulting in a laser induced quantum dot (liqd). the diameter of the liqd is 20~25nm which is much smaller than the as-grown dot and the liqd has a higher density of about 6 × 10~(10)cm~(-2). the surface morphology evolution is investigated by afm.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:01:05导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:01:05z (gmt). no. of bitstreams: 1 3929.pdf: 501157 bytes, checksum: 2fd320a37988f466111b5efcfe252df2 (md5) previous issue date: 2008; 国家自然科学基金(批准号:6 336 1 ),国家重点基础研究发展规划(批准号:g2 366 5)资助项目; institute of semiconductors,chinese academy of sciences |
学科主题 | 光电子学 |
收录类别 | CSCD |
资助信息 | 国家自然科学基金(批准号:6 336 1 ),国家重点基础研究发展规划(批准号:g2 366 5)资助项目 |
语种 | 英语 |
公开日期 | 2010-11-23 ; 2011-04-28 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/16109] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Zeng Yugang,Han Genquan,Yu Jinzhong. Smaller Ge Quantum Dots Obtained by ArF Excimer Laser Annealing[J]. 半导体学报,2008,29(4):641-644. |
APA | Zeng Yugang,Han Genquan,&Yu Jinzhong.(2008).Smaller Ge Quantum Dots Obtained by ArF Excimer Laser Annealing.半导体学报,29(4),641-644. |
MLA | Zeng Yugang,et al."Smaller Ge Quantum Dots Obtained by ArF Excimer Laser Annealing".半导体学报 29.4(2008):641-644. |
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