A Hybrid Random Number Generator Using Single Electron Tunneling Junctions and MOS Transistors

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	A Hybrid Random Number Generator Using Single Electron Tunneling Junctions and MOS Transistors
	Zhang Wancheng ; Wu Nanjian
刊名	半导体学报
	2008
卷号	29 期号:4 页码:693-700
中文摘要	this paper proposes a novel single electron random number generator (rng). the generator consists of multiple tunneling junctions (mtj) and a hybrid single electron transistor (set)/mos output circuit. it is an oscillator-based rng. mtj is used to implement a high-frequency oscillator,which uses the inherent physical randomness in tunneling events of the mtj to achieve large frequency drift. the hybrid set and mos output circuit is used to amplify and buffer the output signal of the mtj oscillator. the rng circuit generates high-quality random digital sequences with a simple structure. the operation speed of this circuit is as high as 1ghz. the circuit also has good driven capability and low power dissipation. this novel random number generator is a promising device for future cryptographic systems and communication applications.
学科主题	微电子学
收录类别	CSCD
资助信息	国家自然科学基金(批准号:9 6 7 7),国家重点基础研究发展规划(批准号:2 6cb9212 1)资助项目
语种	英语
公开日期	2010-11-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/16105]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang Wancheng,Wu Nanjian. A Hybrid Random Number Generator Using Single Electron Tunneling Junctions and MOS Transistors[J]. 半导体学报,2008,29(4):693-700.
APA	Zhang Wancheng,&Wu Nanjian.(2008).A Hybrid Random Number Generator Using Single Electron Tunneling Junctions and MOS Transistors.半导体学报,29(4),693-700.
MLA	Zhang Wancheng,et al."A Hybrid Random Number Generator Using Single Electron Tunneling Junctions and MOS Transistors".半导体学报 29.4(2008):693-700.