Growth of 0.55eV-GaInAsSb Quaternary Alloy Films for a Thermophotovoltaic Device by Liquid Phase Epitaxy

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	Growth of 0.55eV-GaInAsSb Quaternary Alloy Films for a Thermophotovoltaic Device by Liquid Phase Epitaxy
	Yang Xiaoli; Wang Yu
刊名	半导体学报
	2008
卷号	29 期号:7 页码:1258-1262
中文摘要	lattice matched ga_(1-x)in_xas_ysb_(1-y) quaternary alloy films for thermophotovoltaic cells were successfully grown on n-type gasb substrates by liquid phase epitaxy. mirror-like surfaces for the epitaxial layers were achieved and evaluated by atomic force microscopy. the composition of the ga_(1-x)in_xas_ysb_(1-y) layer was characterized by energy dispersive x-ray analysis with the result that x = 0.2, y = 0.17. the absorption edges of the ga_(1-x)in_xas_ysb_(1-y) films were determined to be 2. 256μm at room temperature by fourier transform infrared transmission spectrum analysis, corresponding to an energy gap of 0.55ev. hall measurements show that the highest obtained electron mobility in the undoped p-type samples is 512cm2~/(v·s) and the carrier density is 6. 1×10~(16)cm~(-3) at room temperature. finally, gainassb based thermophotovoltaic cells in different structures with quantum efficiency values of around 60% were fabricated and the spectrum response characteristics of the cells are discussed.
英文摘要	lattice matched ga_(1-x)in_xas_ysb_(1-y) quaternary alloy films for thermophotovoltaic cells were successfully grown on n-type gasb substrates by liquid phase epitaxy. mirror-like surfaces for the epitaxial layers were achieved and evaluated by atomic force microscopy. the composition of the ga_(1-x)in_xas_ysb_(1-y) layer was characterized by energy dispersive x-ray analysis with the result that x = 0.2, y = 0.17. the absorption edges of the ga_(1-x)in_xas_ysb_(1-y) films were determined to be 2. 256μm at room temperature by fourier transform infrared transmission spectrum analysis, corresponding to an energy gap of 0.55ev. hall measurements show that the highest obtained electron mobility in the undoped p-type samples is 512cm2~/(v·s) and the carrier density is 6. 1×10~(16)cm~(-3) at room temperature. finally, gainassb based thermophotovoltaic cells in different structures with quantum efficiency values of around 60% were fabricated and the spectrum response characteristics of the cells are discussed.; 于2010-11-23批量导入; zhangdi于2010-11-23 13:00:43导入数据到semi-ir的ir; made available in dspace on 2010-11-23t05:00:43z (gmt). no. of bitstreams: 1 3856.pdf: 1092982 bytes, checksum: 40e24926c8fb7d1dacda0eeef22d3107 (md5) previous issue date: 2008; institute of semiconductors, chinese academy of sciences
学科主题	半导体材料
收录类别	CSCD
语种	英语
公开日期	2010-11-23 ; 2011-04-28
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/16017]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Yang Xiaoli,Wang Yu. Growth of 0.55eV-GaInAsSb Quaternary Alloy Films for a Thermophotovoltaic Device by Liquid Phase Epitaxy[J]. 半导体学报,2008,29(7):1258-1262.
APA	Yang Xiaoli,&Wang Yu.(2008).Growth of 0.55eV-GaInAsSb Quaternary Alloy Films for a Thermophotovoltaic Device by Liquid Phase Epitaxy.半导体学报,29(7),1258-1262.
MLA	Yang Xiaoli,et al."Growth of 0.55eV-GaInAsSb Quaternary Alloy Films for a Thermophotovoltaic Device by Liquid Phase Epitaxy".半导体学报 29.7(2008):1258-1262.