An asymmetric broad waveguide structure for a 0.98-μm high-conversion-efficiency diode laser

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	An asymmetric broad waveguide structure for a 0.98-μm high-conversion-efficiency diode laser
	Wang Jun; Wang Jun; Wang Guan
刊名	半导体学报
	2009
卷号	30 期号:6 页码:64-67
中文摘要	A novel asymmetric broad waveguide diode laser structure was designed for high power conversion efficiency (PCE). The internal quantum efficiency, the series resistance, and the thermal resistance were theoretically optimized. The series resistance and the thermal resistance were greatly decreased by optimizing the thickness of the P-waveguide and the P-cladding layers. The internal quantum efficiency was increased by introducing a novel strain-compensated GaAs_0.9P_0.1/InGaAs quantum well. Experimentally, a single 1-cm bar with 20% fill factor and 900 μm cavity length was mounted P-side down on a microchannel-cooled heatsink, and a peak PCE of 60% is obtained at 26.3-W continuous wave output power.The results prove that this novel asymmetric waveguide structure design is an efficient approach to improve the PCE.
学科主题	半导体器件
收录类别	CSCD
语种	英语
公开日期	2010-11-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/15755]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Wang Jun,Wang Jun,Wang Guan. An asymmetric broad waveguide structure for a 0.98-μm high-conversion-efficiency diode laser[J]. 半导体学报,2009,30(6):64-67.
APA	Wang Jun,Wang Jun,&Wang Guan.(2009).An asymmetric broad waveguide structure for a 0.98-μm high-conversion-efficiency diode laser.半导体学报,30(6),64-67.
MLA	Wang Jun,et al."An asymmetric broad waveguide structure for a 0.98-μm high-conversion-efficiency diode laser".半导体学报 30.6(2009):64-67.