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	Influence of zinc phthalocyanines on photoelectrical properties of hydrogenated amorphous silicon
	Peng Wenbo; Liu Shiyong
刊名	半导体学报
	2009
卷号	30期号:8页码:39-42
中文摘要	composites consisting of hydrogenated amorphous silicon (a-si: h, inorganic) and zinc phthalocyanine (znpc, organic) were prepared by vacuum evaporation of znpc and sequential deposition amorphous silicon via plasma enhanced chemical vapor deposition (pecvd). the optical and electrical properties of the composite film have been investigated. the results demonstrate that znpc can endure the temperature and bombardment of the pecvd plasma and photoconductivity of the composite film was improved by 89.9% compared to pure a-si: h film. electron mobility-lifetime products μτ of the composite film were increased by nearly one order of magnitude from 6.96 × 10~(-7) to 5.08 × 10~(-6) cm~2/v. combined with photoconductivity spectra of the composites and pure a-si: h, we tentatively elucidate the improvement in photoconductivity of the composite film.
英文摘要	composites consisting of hydrogenated amorphous silicon (a-si: h, inorganic) and zinc phthalocyanine (znpc, organic) were prepared by vacuum evaporation of znpc and sequential deposition amorphous silicon via plasma enhanced chemical vapor deposition (pecvd). the optical and electrical properties of the composite film have been investigated. the results demonstrate that znpc can endure the temperature and bombardment of the pecvd plasma and photoconductivity of the composite film was improved by 89.9% compared to pure a-si: h film. electron mobility-lifetime products μτ of the composite film were increased by nearly one order of magnitude from 6.96 × 10~(-7) to 5.08 × 10~(-6) cm~2/v. combined with photoconductivity spectra of the composites and pure a-si: h, we tentatively elucidate the improvement in photoconductivity of the composite film.; 于2010-11-23批量导入; zhangdi于2010-11-23 12:59:56导入数据到semi-ir的ir; made available in dspace on 2010-11-23t04:59:56z (gmt). no. of bitstreams: 1 3672.pdf: 275174 bytes, checksum: b23ddbe9e877e7639df3a7ce51129f1b (md5) previous issue date: 2009; the state key development program for basic research of china,the national natural science foundation of china,the national high technology research and development program of china; institute of semiconductors,chinese academy of sciences;institute of chemistry,chinese academy of sciences
学科主题	半导体材料
收录类别	CSCD
资助信息	the state key development program for basic research of china,the national natural science foundation of china,the national high technology research and development program of china
语种	英语
公开日期	2010-11-23 ; 2011-04-28
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/15727]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Peng Wenbo,Liu Shiyong. Influence of zinc phthalocyanines on photoelectrical properties of hydrogenated amorphous silicon[J]. 半导体学报,2009,30(8):39-42.
APA	Peng Wenbo,&Liu Shiyong.(2009).Influence of zinc phthalocyanines on photoelectrical properties of hydrogenated amorphous silicon.半导体学报,30(8),39-42.
MLA	Peng Wenbo,et al."Influence of zinc phthalocyanines on photoelectrical properties of hydrogenated amorphous silicon".半导体学报 30.8(2009):39-42.

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