Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions

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	Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions
	Chen Xiaofeng ; Chen Nuofu ; Wu Jinliang ; Zhang Xiulan ; Chai Chunlin ; Yu Yude
刊名	半导体学报
	2009
卷号	30 期号:8 页码:47-51
中文摘要	a gasb crystal incorporated with mn has been grown by the bridgman method on the polizon facility onboard the foton-m3 spacecraft. structural defects and growth striations have been successfully revealed by the chemical etching method. by calculating various parameters of the convection, the striation patterns can be explained, and the critical value of the taylor number, which characterizes the convective condition of the rotating magnetic field induced azimuthal flow, was shown. the stresses generated during crystal growth can be reflected by the observations of etch pit distribution and other structural defects. suggestions for improving the space experiment to improve the quality of the crystal are given.
英文摘要	a gasb crystal incorporated with mn has been grown by the bridgman method on the polizon facility onboard the foton-m3 spacecraft. structural defects and growth striations have been successfully revealed by the chemical etching method. by calculating various parameters of the convection, the striation patterns can be explained, and the critical value of the taylor number, which characterizes the convective condition of the rotating magnetic field induced azimuthal flow, was shown. the stresses generated during crystal growth can be reflected by the observations of etch pit distribution and other structural defects. suggestions for improving the space experiment to improve the quality of the crystal are given.; 于2010-11-23批量导入; zhangdi于2010-11-23 12:59:56导入数据到semi-ir的ir; made available in dspace on 2010-11-23t04:59:56z (gmt). no. of bitstreams: 1 3671.pdf: 403106 bytes, checksum: cefb07d8f0361edbb769c89f4aec3048 (md5) previous issue date: 2009; the space agency of china and the chinese academy of sciences project; institute of semiconductors,chinese academy of sciences
学科主题	半导体材料
收录类别	CSCD
资助信息	the space agency of china and the chinese academy of sciences project
语种	英语
公开日期	2010-11-23 ; 2011-04-28
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/15725]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Chen Xiaofeng,Chen Nuofu,Wu Jinliang,et al. Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions[J]. 半导体学报,2009,30(8):47-51.
APA	Chen Xiaofeng,Chen Nuofu,Wu Jinliang,Zhang Xiulan,Chai Chunlin,&Yu Yude.(2009).Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions.半导体学报,30(8),47-51.
MLA	Chen Xiaofeng,et al."Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions".半导体学报 30.8(2009):47-51.