Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures
	Zhang Yu
刊名	半导体学报
	2009
卷号	30 期号:10 页码:10-12
中文摘要	the influence of annealed ohmic contact metals on the electron mobility of a two dimensional electron gas (2deg) is investigated on ungated algan/gan heterostructures and algan/gan heterostructure field effect transistors (algan/gan hfets). current-voltage (i-v) characteristics for ungated algan/gan heterostructures and capacitance-voltage (c-v) characteristics for algan/gan hfets are obtained, and the electron mobility for the ungated algan/gan heterostructure is calculated. it is found that the electron mobility of the 2deg for the ungated algan/gan heterostructure is decreased by more than 50% compared with the electron mobility of hall measurements. we propose that defects are introduced into the algan barrier layer and the strain of the algan barrier layer is changed during the annealing process of the source and drain, causing the decrease in the electron mobility.
学科主题	半导体材料
收录类别	CSCD
资助信息	the national natural science foundation of china,the state key development program for basic research of china
语种	英语
公开日期	2010-11-23
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/15697]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhang Yu. Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures[J]. 半导体学报,2009,30(10):10-12.
APA	Zhang Yu.(2009).Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures.半导体学报,30(10),10-12.
MLA	Zhang Yu."Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures".半导体学报 30.10(2009):10-12.