A new structure of In-based ohmic contacts to n-type GaAs

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	A new structure of In-based ohmic contacts to n-type GaAs
	Ding SA ; Hsu CC
刊名	applied physics a-materials science & processing
	1996
卷号	62 期号:3 页码:241-245
关键词	MICROSTRUCTURE
ISSN号	0947-8396
中文摘要	electrical, structural and reaction characteristics of in-based ohmic contacts to n-gaas were studied. attempts were made to form a low-band-gap interfacial phase of ingaas to reduce the barrier height at the metal/semiconductor junction, thus yielding low-resistance, highly reliable contacts. the contacts were fabricated by e-beam sputtering ni, niin and ge targets on vpe-grown n(+)-gaas film (approximate to 1 mu m, 2 x 10(18) cm(-3)) in ultrahigh vacuum as the structure of ni(200 angstrom)/niin(100 angstrom)/ge(40 angstrom)/n(+)-gaas/si-gaas, followed by rapid thermal annealing at various temperatures (500-900 degrees c). in this structure, a very thin layer of ge was employed to play the role of heavily doping donors and diffusion limiters between in and the gaas substrate. indium was deposited by sputtering niin alloy instead of pure in in order to ensure in atoms to be distributed uniformly in the substrate; nickel was chosen to consume the excess indium and form a high-temperature alloy of ni3in. the lowest specific contact resistivity (rho(c)) of (1.5 +/- 0.5)x 10(-6) cm(2) measured by the transmission line method (tlm) was obtained after annealing at 700 degrees c for 10 s. auger sputtering depth profile and transmission electron microscopy (tem) were used to analyze the interfacial microstructure. by correlating the interfacial microstructure to the electronical properties, inxga1-xas phases with a large fractional area grown epitaxially on gaas were found to be essential for reduction of the contact resistance.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-11-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/15447]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Ding SA,Hsu CC. A new structure of In-based ohmic contacts to n-type GaAs[J]. applied physics a-materials science & processing,1996,62(3):241-245.
APA	Ding SA,&Hsu CC.(1996).A new structure of In-based ohmic contacts to n-type GaAs.applied physics a-materials science & processing,62(3),241-245.
MLA	Ding SA,et al."A new structure of In-based ohmic contacts to n-type GaAs".applied physics a-materials science & processing 62.3(1996):241-245.