Light-extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes using two-step roughening methods

	Light-extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes using two-step roughening methods
	An TL(安铁雷); Sun B(孙波); Wei TB(魏同波); Zhao LX(赵丽霞); Duan RF(段瑞飞); Liao YX(廖元勋); Li JM(李晋闽); Yi FT(伊福廷)
刊名	Journal of Semiconductors
	2013
期号	11 页码:53-56
关键词	freestanding GaN flip chip LED CsCl wet etching light extraction
英文摘要	The light extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes(FSFCLEDs)using two-step roughening methods is investigated.The output power of LEDs fabricated by using one-step and two-step roughening methods are compared.The results indicate that two-step roughening metho...
公开日期	2016-02-25
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/223032]
专题	高能物理研究所_多学科研究中心
推荐引用方式 GB/T 7714	An TL,Sun B,Wei TB,et al. Light-extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes using two-step roughening methods[J]. Journal of Semiconductors,2013(11):53-56.
APA	安铁雷.,孙波.,魏同波.,赵丽霞.,段瑞飞.,...&伊福廷.(2013).Light-extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes using two-step roughening methods.Journal of Semiconductors(11),53-56.
MLA	安铁雷,et al."Light-extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes using two-step roughening methods".Journal of Semiconductors .11(2013):53-56.