In situ electronic structural study of VO_2 thin film across the metal–insulator transition | |
伊明江·买买提; 阿布都艾则孜·阿布来提; Wu R(吴蕊)![]() ![]() ![]() | |
刊名 | Chinese Physics B
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2013 | |
期号 | 12页码:414-419 |
关键词 | vanadium dioxide metal–insulator transition electronic structure photoemission spectroscopy |
通讯作者 | 奎热西 |
英文摘要 | The in situ valence band photoemission spectrum(PES) and X-ray absorption spectrum(XAS) at V LII LIIIedges of the VO2 thin film, which is prepared by pulsed laser deposition, are measured across the metal–insulator transition(MIT) temperature(TMIT= 67°C). The spectra show evidence for changes in the... |
公开日期 | 2016-02-25 |
内容类型 | 期刊论文 |
源URL | [http://ir.ihep.ac.cn/handle/311005/223011] ![]() |
专题 | 高能物理研究所_多学科研究中心 |
推荐引用方式 GB/T 7714 | 伊明江·买买提,阿布都艾则孜·阿布来提,Wu R,et al. In situ electronic structural study of VO_2 thin film across the metal–insulator transition[J]. Chinese Physics B,2013(12):414-419. |
APA | 伊明江·买买提,阿布都艾则孜·阿布来提,吴蕊,王嘉鸥,钱海杰,&奎热西·依布拉欣.(2013).In situ electronic structural study of VO_2 thin film across the metal–insulator transition.Chinese Physics B(12),414-419. |
MLA | 伊明江·买买提,et al."In situ electronic structural study of VO_2 thin film across the metal–insulator transition".Chinese Physics B .12(2013):414-419. |
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