In situ electronic structural study of VO_2 thin film across the metal–insulator transition

	In situ electronic structural study of VO_2 thin film across the metal–insulator transition
	伊明江·买买提; 阿布都艾则孜·阿布来提; Wu R(吴蕊); Wang JO(王嘉鸥); Qian HJ(钱海杰); 奎热西·依布拉欣
刊名	Chinese Physics B
	2013
期号	12 页码:414-419
关键词	vanadium dioxide metal–insulator transition electronic structure photoemission spectroscopy
通讯作者	奎热西
英文摘要	The in situ valence band photoemission spectrum(PES) and X-ray absorption spectrum(XAS) at V LII LIIIedges of the VO2 thin film, which is prepared by pulsed laser deposition, are measured across the metal–insulator transition(MIT) temperature(TMIT= 67°C). The spectra show evidence for changes in the...
公开日期	2016-02-25
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/223011]
专题	高能物理研究所_多学科研究中心
推荐引用方式 GB/T 7714	伊明江·买买提,阿布都艾则孜·阿布来提,Wu R,et al. In situ electronic structural study of VO_2 thin film across the metal–insulator transition[J]. Chinese Physics B,2013(12):414-419.
APA	伊明江·买买提,阿布都艾则孜·阿布来提,吴蕊,王嘉鸥,钱海杰,&奎热西·依布拉欣.(2013).In situ electronic structural study of VO_2 thin film across the metal–insulator transition.Chinese Physics B(12),414-419.
MLA	伊明江·买买提,et al."In situ electronic structural study of VO_2 thin film across the metal–insulator transition".Chinese Physics B .12(2013):414-419.