Diffusion of ion implanted as in Si1-xGex epilayers

	Diffusion of ion implanted as in Si1-xGex epilayers
	Zou LF ; Wang ZG ; Sun DZ ; Fan TW ; Liu XF ; Zhang JW
刊名	chinese physics letters
	1997
卷号	14 期号:1 页码:51-54
关键词	SILICON SI PRECIPITATION TEMPERATURE
ISSN号	0256-307x
通讯作者	zou lf chinese acad sciinst semicondlab semicond mat scibeijing 100083peoples r china.
中文摘要	diffusion of implanted as ion in relaxed si1-xgex was studied as a function of ge content over a wide range of ge fractions (0-43%) and annealing temperature, and was compared to diffusion in si. experimental results showed that the as diffusion is enhanced with increasing annealing temperature for certain ge content and strongly dependent on the higher ge content and the faster as diffusion.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-11-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/15261]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zou LF,Wang ZG,Sun DZ,et al. Diffusion of ion implanted as in Si1-xGex epilayers[J]. chinese physics letters,1997,14(1):51-54.
APA	Zou LF,Wang ZG,Sun DZ,Fan TW,Liu XF,&Zhang JW.(1997).Diffusion of ion implanted as in Si1-xGex epilayers.chinese physics letters,14(1),51-54.
MLA	Zou LF,et al."Diffusion of ion implanted as in Si1-xGex epilayers".chinese physics letters 14.1(1997):51-54.